Chemical beam epitaxy of GaN using triethylgallium and ammonia

X. Q. Shen, Tanaka Satoru, S. Iwai, Y. Aoyagi

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

GaN films were successfully grown on Al2O3(0 0 0 1) and 6H-SiC(0 0 0 1) substrates by chemical beam epitaxy (CBE) using triethylgallium (TEG) and ammonia (NH3) as group III and group V sources. Reflection high-energy electron diffraction (RHEED), atomic force microscopy (AFM) and X-ray diffraction (XRD) were used to characterize the growth processes, surface morphologies and the film qualities of GaN. It was found that the GaN growth mode was two-dimensional and that the GaN quality was improved by increasing the NH3 supply. XRD measurements show that the quality of GaN films grown on 6H-SiC(0 0 0 1) substrates is better than that grown on Al2O3(0 0 0 1) substrates. AFM characterizations illustrate that the surface morphologies of GaN are greatly influenced by the NH3 flow rates.

Original languageEnglish
Pages (from-to)86-91
Number of pages6
JournalJournal of Crystal Growth
Volume188
Issue number1-4
DOIs
Publication statusPublished - Jun 1 1998
Externally publishedYes

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Chemical beam epitaxy
Ammonia
epitaxy
ammonia
Surface morphology
Atomic force microscopy
Substrates
atomic force microscopy
X ray diffraction
Reflection high energy electron diffraction
diffraction
high energy electrons
x rays
electron diffraction
flow velocity
Flow rate

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Chemical beam epitaxy of GaN using triethylgallium and ammonia. / Shen, X. Q.; Satoru, Tanaka; Iwai, S.; Aoyagi, Y.

In: Journal of Crystal Growth, Vol. 188, No. 1-4, 01.06.1998, p. 86-91.

Research output: Contribution to journalArticle

Shen, X. Q. ; Satoru, Tanaka ; Iwai, S. ; Aoyagi, Y. / Chemical beam epitaxy of GaN using triethylgallium and ammonia. In: Journal of Crystal Growth. 1998 ; Vol. 188, No. 1-4. pp. 86-91.
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