TY - JOUR
T1 - Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition
AU - Gima, Hiroki
AU - Zkria, Abdelrahman
AU - Katamune, Yuki
AU - Ohtani, Ryota
AU - Koizumi, Satoshi
AU - Yoshitake, Tsuyoshi
PY - 2017/1
Y1 - 2017/1
N2 - Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, φ C-N and C=N bonds that easily generate free electrons will be formed at grain boundaries.
AB - Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, φ C-N and C=N bonds that easily generate free electrons will be formed at grain boundaries.
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U2 - 10.7567/APEX.10.015801
DO - 10.7567/APEX.10.015801
M3 - Article
AN - SCOPUS:85009106636
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 1
M1 - 015801
ER -