Chemical bonding structural analysis of nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite films prepared by coaxial arc plasma deposition

Hiroki Gima, Abdelrahman Zkria, Yuki Katamune, Ryota Ohtani, Satoshi Koizumi, Tsuyoshi Yoshitake

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    Nitrogen-doped ultra-nanocrystalline diamond/hydrogenated amorphous carbon composite films prepared in hydrogen and nitrogen mixed-gas atmospheres by coaxial arc plasma deposition with graphite targets were studied electrically and chemical-bonding-structurally. The electrical conductivity was increased by nitrogen doping, accompanied by the production of n-type conduction. From X-ray photoemission, near-edge X-ray absorption fine-structure, hydrogen forward-scattering, and Fourier transform infrared spectral results, it is expected that hydrogen atoms that terminate diamond grain boundaries will be partially replaced by nitrogen atoms and, consequently, φ C-N and C=N bonds that easily generate free electrons will be formed at grain boundaries.

    Original languageEnglish
    Article number015801
    JournalApplied Physics Express
    Issue number1
    Publication statusPublished - Jan 2017


    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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