TY - JOUR
T1 - Chemical degradation of SOFCs
T2 - External impurity poisoning and internal diffusion-related phenomena
AU - Sasaki, K.
AU - Yoshizumi, T.
AU - Haga, K.
AU - Yoshitomi, H.
AU - Hosoi, T.
AU - Shiratori, Y.
AU - Taniguchi, S.
PY - 2013
Y1 - 2013
N2 - Durability of SOFCs is one of the most important requirements for commercialization. In this paper, we analyze chemical degradation phenomena caused by both extrinsic and intrinsic origins besides by thermal/redox cycling. As external degradation, impurity (sulfur, phosphorus etc.) poisoning has been systematically analyzed and classified based on both thermochemical and kinetic consideration. We present typical intrinsic chemical degradation phenomena observed, mainly diffusion-related processes (interdiffusion, grain boundary diffusion, dopant dissolution, phase transformation etc.) around interfaces between the electrolyte and the electrode, which has been revealed through high-resolution STEM-EDX analysis of cells after long-term operation. Degradation mechanisms have been classified.
AB - Durability of SOFCs is one of the most important requirements for commercialization. In this paper, we analyze chemical degradation phenomena caused by both extrinsic and intrinsic origins besides by thermal/redox cycling. As external degradation, impurity (sulfur, phosphorus etc.) poisoning has been systematically analyzed and classified based on both thermochemical and kinetic consideration. We present typical intrinsic chemical degradation phenomena observed, mainly diffusion-related processes (interdiffusion, grain boundary diffusion, dopant dissolution, phase transformation etc.) around interfaces between the electrolyte and the electrode, which has been revealed through high-resolution STEM-EDX analysis of cells after long-term operation. Degradation mechanisms have been classified.
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U2 - 10.1149/05701.0315ecst
DO - 10.1149/05701.0315ecst
M3 - Article
AN - SCOPUS:84905025447
VL - 57
SP - 315
EP - 323
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 1
ER -