TY - GEN
T1 - Chemical mechanical properties of perovskite oxide abrasive grain
T2 - 11th International Conference on Planarization/CMP Technology, ICPT 2014
AU - Ozawa, Nobuki
AU - Higuchi, Yuji
AU - Kubo, Momoji
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2015/1/20
Y1 - 2015/1/20
N2 - To elucidate the chemical mechanical polishing (CMP) performance of perovskite oxide abrasive grain for glass, we investigated electronic states of CaZrO3 and SrFeO3 by the first-principles calculation. The calculation results show that the Zr and Fe atoms in CaZrO3 and SrFeO3 take low valence states. We suggest that the metal atoms in perovskite oxide are effective for the glass polishing since low-valent metal atoms can weaken the Si-O bond of the glass surface by electron donation based on our reported CMP mechanism of glass by CeO2 abrasive grains.
AB - To elucidate the chemical mechanical polishing (CMP) performance of perovskite oxide abrasive grain for glass, we investigated electronic states of CaZrO3 and SrFeO3 by the first-principles calculation. The calculation results show that the Zr and Fe atoms in CaZrO3 and SrFeO3 take low valence states. We suggest that the metal atoms in perovskite oxide are effective for the glass polishing since low-valent metal atoms can weaken the Si-O bond of the glass surface by electron donation based on our reported CMP mechanism of glass by CeO2 abrasive grains.
UR - http://www.scopus.com/inward/record.url?scp=84925357403&partnerID=8YFLogxK
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U2 - 10.1109/ICPT.2014.7017280
DO - 10.1109/ICPT.2014.7017280
M3 - Conference contribution
AN - SCOPUS:84925357403
T3 - ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
SP - 203
EP - 204
BT - ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 19 November 2014 through 21 November 2014
ER -