Chemical stability improvement in IGZO using selective laser annealing system

Tetsuya Goto, Kaori Saito, Fuminobu Imaizumi, Michinobu Mizumura, Akira Suwa, Hiroshi Ikenoue, Shigetoshi Sugawa

Research output: Contribution to journalConference article

Abstract

Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser-irradiated area (60µm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser-treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the island patterning.

Original languageEnglish
Pages (from-to)604-607
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume48
Issue number1
DOIs
Publication statusPublished - Jan 1 2017
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: May 21 2017May 26 2017

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Chemical stability
Annealing
Lasers
Excimer lasers
Amorphous films
Lithography
Lighting
Acids

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Chemical stability improvement in IGZO using selective laser annealing system. / Goto, Tetsuya; Saito, Kaori; Imaizumi, Fuminobu; Mizumura, Michinobu; Suwa, Akira; Ikenoue, Hiroshi; Sugawa, Shigetoshi.

In: Digest of Technical Papers - SID International Symposium, Vol. 48, No. 1, 01.01.2017, p. 604-607.

Research output: Contribution to journalConference article

Goto, Tetsuya ; Saito, Kaori ; Imaizumi, Fuminobu ; Mizumura, Michinobu ; Suwa, Akira ; Ikenoue, Hiroshi ; Sugawa, Shigetoshi. / Chemical stability improvement in IGZO using selective laser annealing system. In: Digest of Technical Papers - SID International Symposium. 2017 ; Vol. 48, No. 1. pp. 604-607.
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