Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser-irradiated area (60µm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser-treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the island patterning.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|Publication status||Published - Jan 1 2017|
|Event||SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States|
Duration: May 21 2017 → May 26 2017
All Science Journal Classification (ASJC) codes