Chemical States of Implanted Aluminum Ions in Silica and Silicon Ions in Alumina

Kohei Fnkumi, Akiyoshi Chayahara, Masaki Makihara, Kanenaga Fujii, Junji Hayakawa, Mamoru Satou

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19 Citations (Scopus)

Abstract

Aluminum and silicon ions have been implanted in silica glass and α‐alumina single crystal, respectively, to doses ranging from 1 × 1015 to 1 × 1017 ions·cm‐2. The chemical states of these implanted ions have been studied by X‐ray fluorescence spectroscopy. It is found that the implanted aluminum atoms are coordinated only by oxygen atoms, irrespective of implantation dose. On the other hand, the implanted silicon atoms are coordinated only by oxygen atoms at low doses and by both oxygen and silicon atoms at high doses. Although the chemical state of the aluminum atoms is unchanged by heat treatment, that of the silicon atoms is changed toward a less positively charged state. It is inferred that the chemical states of the implanted atoms are controlled by the transport process, although these tend to obey the thermodynamic stability.

Original languageEnglish
Pages (from-to)3019-3022
Number of pages4
JournalJournal of the American Ceramic Society
Volume77
Issue number11
DOIs
Publication statusPublished - Nov 1994

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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