Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics

Hyun Goo Ji, Pablo Solís-Fernández, Daisuke Yoshimura, Mina Maruyama, Takahiko Endo, Yasumitsu Miyata, Susumu Okada, Hiroki Ago

Research output: Contribution to journalArticle

Abstract

Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V−1s−1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics.

Original languageEnglish
Article number1903613
JournalAdvanced Materials
Volume31
Issue number42
DOIs
Publication statusPublished - Oct 1 2019

Fingerprint

Carrier mobility
Monolayers
Electronic equipment
Doping (additives)
Transition metals
Silicon
Field effect transistors
Metals
Transport properties
Photonics
Density functional theory
Photoluminescence
Energy gap
Electric power utilization
X ray photoelectron spectroscopy
Semiconductor materials
Atoms
Molecules
Electrons
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ji, H. G., Solís-Fernández, P., Yoshimura, D., Maruyama, M., Endo, T., Miyata, Y., ... Ago, H. (2019). Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics. Advanced Materials, 31(42), [1903613]. https://doi.org/10.1002/adma.201903613

Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics. / Ji, Hyun Goo; Solís-Fernández, Pablo; Yoshimura, Daisuke; Maruyama, Mina; Endo, Takahiko; Miyata, Yasumitsu; Okada, Susumu; Ago, Hiroki.

In: Advanced Materials, Vol. 31, No. 42, 1903613, 01.10.2019.

Research output: Contribution to journalArticle

Ji, HG, Solís-Fernández, P, Yoshimura, D, Maruyama, M, Endo, T, Miyata, Y, Okada, S & Ago, H 2019, 'Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics', Advanced Materials, vol. 31, no. 42, 1903613. https://doi.org/10.1002/adma.201903613
Ji HG, Solís-Fernández P, Yoshimura D, Maruyama M, Endo T, Miyata Y et al. Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics. Advanced Materials. 2019 Oct 1;31(42). 1903613. https://doi.org/10.1002/adma.201903613
Ji, Hyun Goo ; Solís-Fernández, Pablo ; Yoshimura, Daisuke ; Maruyama, Mina ; Endo, Takahiko ; Miyata, Yasumitsu ; Okada, Susumu ; Ago, Hiroki. / Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics. In: Advanced Materials. 2019 ; Vol. 31, No. 42.
@article{17879ecb052b4992a7b74ae9dfc230a0,
title = "Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics",
abstract = "Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V−1s−1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics.",
author = "Ji, {Hyun Goo} and Pablo Sol{\'i}s-Fern{\'a}ndez and Daisuke Yoshimura and Mina Maruyama and Takahiko Endo and Yasumitsu Miyata and Susumu Okada and Hiroki Ago",
year = "2019",
month = "10",
day = "1",
doi = "10.1002/adma.201903613",
language = "English",
volume = "31",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "42",

}

TY - JOUR

T1 - Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics

AU - Ji, Hyun Goo

AU - Solís-Fernández, Pablo

AU - Yoshimura, Daisuke

AU - Maruyama, Mina

AU - Endo, Takahiko

AU - Miyata, Yasumitsu

AU - Okada, Susumu

AU - Ago, Hiroki

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V−1s−1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics.

AB - Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe2 is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe2 field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe2 show increased effective carrier mobilities of 82 and 25 cm2 V−1s−1 for holes and electrons, respectively, which are much higher than those of the pristine WSe2. The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe2 will contribute to the development of TMDC-based advanced electronics.

UR - http://www.scopus.com/inward/record.url?scp=85071471390&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85071471390&partnerID=8YFLogxK

U2 - 10.1002/adma.201903613

DO - 10.1002/adma.201903613

M3 - Article

C2 - 31475400

AN - SCOPUS:85071471390

VL - 31

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 42

M1 - 1903613

ER -