Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth

Kaoru Toko, Yasuharu Ohta, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

High-quality Ge-on-insulators (GOIs) are essential structures for high-performance transistors on an Si platform. We developed a rapid-melting-growth process for amorphous Ge (a-Ge) by optimizing the cooling rate and the underlying insulating materials. The effects of the solidification process for molten Ge on hole generation and spontaneous nucleation in Ge were determined. In addition, nucleation in the a-Ge matrix was found to be drastically suppressed by substituting SiO2 underlayers with SiN underlayers. By combining high cooling rates (10.5-11.5 °Cs-1) and SiN underlayers, we obtained ultra-long single crystal GOI strips (1 cm) with high hole mobilities (> 1000 cm2V-1s -1). This chip-size formation of high-quality GOI will facilitate the development of advanced high-speed Ge-based devices.

Original languageEnglish
Article number032103
JournalApplied Physics Letters
Volume99
Issue number3
DOIs
Publication statusPublished - Jul 18 2011

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strip
chips
melting
insulators
cooling
nucleation
hole mobility
insulation
solidification
transistors
platforms
high speed
single crystals
matrices

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth. / Toko, Kaoru; Ohta, Yasuharu; Tanaka, Takanori; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 99, No. 3, 032103, 18.07.2011.

Research output: Contribution to journalArticle

Toko, Kaoru ; Ohta, Yasuharu ; Tanaka, Takanori ; Sadoh, Taizoh ; Miyao, Masanobu. / Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth. In: Applied Physics Letters. 2011 ; Vol. 99, No. 3.
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