Chloride-based CVD growth of silicon carbide for electronic applications

Henrik Pedersen, Stefano Leone, Olof Kordina, Anne Henry, Shinichi Nishizawa, Yaroslav Koshka, Erik Janzén

Research output: Contribution to journalReview article

62 Citations (Scopus)

Abstract

A study was conducted to demonstrate chloride-based chemical vapor deposition (CVD) growth of silicon carbide (SiC) for electronic applications. SiC homoepitaxial growth was done using CVD with silane (SiH 4) as the silicon precursor and light hydrocarbons, including ethylene (C 2H 4) or propane (C 3H 8) as the carbon precursor. Simulation was an invaluable tool along with comparisons between different chlorinated chemistries to obtain a deeper understanding of the chloride-based process and provide more information. A number of approaches were selected to add chlorine to the gas mixture for the growth of SiC epitaxial layers using a chloride-based chemistry.

Original languageEnglish
Pages (from-to)2434-2453
Number of pages20
JournalChemical Reviews
Volume112
Issue number4
DOIs
Publication statusPublished - Apr 11 2012
Externally publishedYes

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Chlorides
Chemical vapor deposition
Silanes
Propane
Chlorine
Epitaxial layers
Silicon
Hydrocarbons
Gas mixtures
Carbon
silicon carbide
ethylene

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

Cite this

Pedersen, H., Leone, S., Kordina, O., Henry, A., Nishizawa, S., Koshka, Y., & Janzén, E. (2012). Chloride-based CVD growth of silicon carbide for electronic applications. Chemical Reviews, 112(4), 2434-2453. https://doi.org/10.1021/cr200257z

Chloride-based CVD growth of silicon carbide for electronic applications. / Pedersen, Henrik; Leone, Stefano; Kordina, Olof; Henry, Anne; Nishizawa, Shinichi; Koshka, Yaroslav; Janzén, Erik.

In: Chemical Reviews, Vol. 112, No. 4, 11.04.2012, p. 2434-2453.

Research output: Contribution to journalReview article

Pedersen, H, Leone, S, Kordina, O, Henry, A, Nishizawa, S, Koshka, Y & Janzén, E 2012, 'Chloride-based CVD growth of silicon carbide for electronic applications', Chemical Reviews, vol. 112, no. 4, pp. 2434-2453. https://doi.org/10.1021/cr200257z
Pedersen H, Leone S, Kordina O, Henry A, Nishizawa S, Koshka Y et al. Chloride-based CVD growth of silicon carbide for electronic applications. Chemical Reviews. 2012 Apr 11;112(4):2434-2453. https://doi.org/10.1021/cr200257z
Pedersen, Henrik ; Leone, Stefano ; Kordina, Olof ; Henry, Anne ; Nishizawa, Shinichi ; Koshka, Yaroslav ; Janzén, Erik. / Chloride-based CVD growth of silicon carbide for electronic applications. In: Chemical Reviews. 2012 ; Vol. 112, No. 4. pp. 2434-2453.
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