Chloride-based CVD growth of silicon carbide for electronic applications

Henrik Pedersen, Stefano Leone, Olof Kordina, Anne Henry, Shin Ichi Nishizawa, Yaroslav Koshka, Erik Janzén

Research output: Contribution to journalReview article

65 Citations (Scopus)

Abstract

A study was conducted to demonstrate chloride-based chemical vapor deposition (CVD) growth of silicon carbide (SiC) for electronic applications. SiC homoepitaxial growth was done using CVD with silane (SiH 4) as the silicon precursor and light hydrocarbons, including ethylene (C 2H 4) or propane (C 3H 8) as the carbon precursor. Simulation was an invaluable tool along with comparisons between different chlorinated chemistries to obtain a deeper understanding of the chloride-based process and provide more information. A number of approaches were selected to add chlorine to the gas mixture for the growth of SiC epitaxial layers using a chloride-based chemistry.

Original languageEnglish
Pages (from-to)2434-2453
Number of pages20
JournalChemical Reviews
Volume112
Issue number4
DOIs
Publication statusPublished - Apr 11 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

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