Cleaning of residual silicon on InP regrowth interface in MOVPE reactor

Koichi Naniwae, Masaki Ohya, Kiichi Hamamoto, Kenichi Nishi, Tatsuya Sasaki

Research output: Contribution to journalConference articlepeer-review

Abstract

Investigating the use of tertiarybutylchloride (TBCl) to clean residual silicon from InP regrowth interfaces in an MOVPE reactor, we found the amount of the residual silicon to be greatly decreased when trimethylindium was supplied together with TBCl in order to balance the etching rate and the growth rate during the cleaning process. Using this cleaning process in the fabrication of buried hetero-structure laser diodes, we demonstrated that it improves their light-current characteristics by reducing the leakage current in the devices.

Original languageEnglish
Pages (from-to)126-129
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 2004
Externally publishedYes
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: May 31 2004Jun 4 2004

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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