Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition

Kazunori Koga, Naoto Kaguchi, Kouki Bando, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journalReview article

17 Citations (Scopus)

Abstract

A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.

Original languageEnglish
Article number113501
Pages (from-to)1-4
Number of pages4
JournalReview of Scientific Instruments
Volume76
Issue number11
DOIs
Publication statusPublished - Dec 12 2005

Fingerprint

Chemical vapor deposition
vapor deposition
Plasmas
filters
Hydrogen
Surface reactions
Amorphous silicon
Volume fraction
Nanoparticles
surface reactions
amorphous silicon
reactors
nanoparticles
hydrogen

All Science Journal Classification (ASJC) codes

  • Instrumentation

Cite this

Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition. / Koga, Kazunori; Kaguchi, Naoto; Bando, Kouki; Shiratani, Masaharu; Watanabe, Yukio.

In: Review of Scientific Instruments, Vol. 76, No. 11, 113501, 12.12.2005, p. 1-4.

Research output: Contribution to journalReview article

@article{0be4ca4a88994ebea7dfa9f5da2f2ea1,
title = "Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition",
abstract = "A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. {\%}.",
author = "Kazunori Koga and Naoto Kaguchi and Kouki Bando and Masaharu Shiratani and Yukio Watanabe",
year = "2005",
month = "12",
day = "12",
doi = "10.1063/1.2126572",
language = "English",
volume = "76",
pages = "1--4",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

TY - JOUR

T1 - Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition

AU - Koga, Kazunori

AU - Kaguchi, Naoto

AU - Bando, Kouki

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

PY - 2005/12/12

Y1 - 2005/12/12

N2 - A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.

AB - A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.

UR - http://www.scopus.com/inward/record.url?scp=28444458130&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28444458130&partnerID=8YFLogxK

U2 - 10.1063/1.2126572

DO - 10.1063/1.2126572

M3 - Review article

VL - 76

SP - 1

EP - 4

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 11

M1 - 113501

ER -