Abstract
A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.
| Original language | English |
|---|---|
| Article number | 113501 |
| Pages (from-to) | 1-4 |
| Number of pages | 4 |
| Journal | Review of Scientific Instruments |
| Volume | 76 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - Dec 12 2005 |
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All Science Journal Classification (ASJC) codes
- Instrumentation
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Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition. / Koga, Kazunori; Kaguchi, Naoto; Bando, Kouki; Shiratani, Masaharu; Watanabe, Yukio.
In: Review of Scientific Instruments, Vol. 76, No. 11, 113501, 12.12.2005, p. 1-4.Research output: Contribution to journal › Review article
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TY - JOUR
T1 - Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition
AU - Koga, Kazunori
AU - Kaguchi, Naoto
AU - Bando, Kouki
AU - Shiratani, Masaharu
AU - Watanabe, Yukio
PY - 2005/12/12
Y1 - 2005/12/12
N2 - A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.
AB - A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.
UR - http://www.scopus.com/inward/record.url?scp=28444458130&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=28444458130&partnerID=8YFLogxK
U2 - 10.1063/1.2126572
DO - 10.1063/1.2126572
M3 - Review article
VL - 76
SP - 1
EP - 4
JO - Review of Scientific Instruments
JF - Review of Scientific Instruments
SN - 0034-6748
IS - 11
M1 - 113501
ER -