Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition

Kazunori Koga; Naoto Kaguchi; Kouki Bando; Masaharu Shiratani; Yukio Watanabe

doi:10.1063/1.2126572

Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition

Kazunori Koga, Naoto Kaguchi, Kouki Bando, Masaharu Shiratani, Yukio Watanabe

Research output: Contribution to journal › Review article

18 Citations (Scopus)

Abstract

A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.

Original language	English
Article number	113501
Pages (from-to)	1-4
Number of pages	4
Journal	Review of Scientific Instruments
Volume	76
Issue number	11
DOIs	https://doi.org/10.1063/1.2126572
Publication status	Published - Dec 12 2005

All Science Journal Classification (ASJC) codes

Instrumentation

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10.1063/1.2126572

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Koga, K., Kaguchi, N., Bando, K., Shiratani, M., & Watanabe, Y. (2005). Cluster-eliminating filter for depositing cluster-free a-Si:H films by plasma chemical vapor deposition. Review of Scientific Instruments, 76(11), 1-4. [113501]. https://doi.org/10.1063/1.2126572

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abstract = "A cluster-eliminating filter is developed to reduce a volume fraction VF of amorphous silicon nanoparticles above approximately 1 nm in size (referred to as a cluster) incorporated into a-Si:H films. The filter reduces the VF value by using the difference between a sticking probability of clusters and a surface reaction probability of SiH3 radicals, which are the predominant deposition radicals. By employing the filter together with a cluster-suppressed plasma chemical vapor deposition reactor, the VF value is reduced below 1180 compared to that for the conventional device quality films. Such cluster-free a-Si:H films have an extremely small hydrogen concentration associated with Si- H2 bonds below 5.46× 10-3 at. %.",

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AU - Kaguchi, Naoto

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AU - Shiratani, Masaharu

AU - Watanabe, Yukio

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