Cluster-free B-doped a-Si:H films deposited using SiH4 + B 10H14 multi-hollow discharges

Kenta Nakahara, Yuki Kawashima, Muneharu Sato, Takeaki Matsunaga, Kousuke Yamamoto, William Makoto Nakamura, Daisuke Yamashita, Hidefumi Matsuzaki, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have deposited cluster-free B-doped a-Si:H films using a SiH 4=B10H14 multi-hollow discharge plasma CVD method. We have studied gas flow rate ratio R=[B10H 14]/[SiH4] dependence of deposition rate and absorbance of films together with plasma emission intensities. Deposition rate increases sharply from 0.8nm/s R=0.0 % to 2.2nm/s for R=0.53%, but SiH emission intensity is almost constant for R=0-2.0%. These results suggest BxH y radicals enhance surface reaction probability of SiH3 radicals. The optical bandgap of films is around 1.9eV, being larger than that of conventional B-doped films.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages2216-2218
Number of pages3
DOIs
Publication statusPublished - Dec 1 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

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    Nakahara, K., Kawashima, Y., Sato, M., Matsunaga, T., Yamamoto, K., Nakamura, W. M., Yamashita, D., Matsuzaki, H., Uchida, G., Itagaki, N., Koga, K., & Shiratani, M. (2010). Cluster-free B-doped a-Si:H films deposited using SiH4 + B 10H14 multi-hollow discharges. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 2216-2218). [5686686] https://doi.org/10.1109/TENCON.2010.5686686