Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

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Abstract

Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

Original languageEnglish
Pages (from-to)A561-A566
JournalMaterials Research Society Symposium - Proceedings
Volume664
DOIs
Publication statusPublished - Jan 1 2001
EventAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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