Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

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2 Citations (Scopus)

Abstract

Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

Original languageEnglish
JournalMaterials Research Society Symposium - Proceedings
Volume664
Publication statusPublished - Dec 1 2001
EventAmorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States
Duration: Apr 16 2001Apr 20 2001

Fingerprint

Plasma CVD
reactors
vapor deposition
Gases
Silanes
Amorphous silicon
radio frequency discharge
Electrodes
stagnation point
Substrates
gases
silanes
amorphous silicon
electrodes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Cluster-less plasma CVD reactor and its application to a-Si:H film deposition",
abstract = "Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.",
author = "Masaharu Shiratani and Kazunori Koga and Yukio Watanabe",
year = "2001",
month = "12",
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volume = "664",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
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TY - JOUR

T1 - Cluster-less plasma CVD reactor and its application to a-Si:H film deposition

AU - Shiratani, Masaharu

AU - Koga, Kazunori

AU - Watanabe, Yukio

PY - 2001/12/1

Y1 - 2001/12/1

N2 - Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

AB - Even under the conventional device-quality discharge conditions, large amount of clusters are found to exist in silane radio frequency (RF) discharges. The size and density of clusters near the substrate on the grounded electrode are 2 nm and 1011 cm-3, respectively. In order to prevent such clusters from depositing on hydrogenated amorphous silicon (a-Si:H) films, we have developed a cluster-less plasma CVD reactor which can significantly suppress cluster amount by using gas viscous and thermophoretic forces exerted on clusters, and by reducing gas stagnation region. Using the reactor, we have demonstrated deposition of ultra high quality a-Si:H films which have a significantly less concentration of Si-H2 bonds compared to conventional device-quality films.

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M3 - Conference article

VL - 664

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

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