CMOS application of schottky source/drain SOI MOSFET with shallow doped extension

Sumie Matsumoto, Mika Nishisaka, Tanemasa Asano

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) whose source/drain is composed of Schottky contacts and a shallow-doped extension is investigated. It is demonstrated that the incorporation of the shallow-doped extension into the Schottky source/drain can increase the current drive and reduce the leakage current under reverse bias for both n-channel and p-channel devices. The shallow doping is performed by implanting Sb for n-channel devices, and BF2 or Ga for p-channel devices. The effect of Schottky contacts on the floating body effect (FBE) is investigated by analyzing the lateral bipolar characteristics of these devices. By employing the shallow-doped extension, a complementary MOS (CMOS) of the Schottky source/drain can be fabricated using single metal (cobalt, in this work) suicide. The stability of CMOS operation with the proposed devices under a high supply voltage is demonstrated by comparing it with a conventional pn-junction SOI MOSFET. It is also demonstrated from the characteristics of the CMOS-inverter ring oscillator that the proposed device operates at speeds as high as or even higher than that of the conventional SOI MOSFET.

Original languageEnglish
Pages (from-to)2170-2175
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number4 B
DOIs
Publication statusPublished - Apr 2004

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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