CMOS class-E power amplifier module with CPW bonding wires for 5GHz application

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper presents a CMOS class-E power amplifier (PA) with high efficiency for 5GHz band wireless-mesh-network system using constant envelope modulation scheme. The proposed class-E PA employs injection-locking technique and parasitic compensation to reduce the required DC input power. This PA is realized by using 0.18 um CMOS process. This PA is placed on the lead frame and molded in the package for transmitter application. In our design, the position and length of the bonding wires are optimized by using EM simulation. In addition, a coplanar waveguide (CPW) structure was realized by the bonding wires in the RF port. Our PA module has a measured PAE = 41.0 %.

Original languageEnglish
Title of host publication2017 International Conference on Electronics Packaging, ICEP 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages237-238
Number of pages2
ISBN (Electronic)9784990218836
DOIs
Publication statusPublished - Jun 5 2017
Event2017 International Conference on Electronics Packaging, ICEP 2017 - Tendo, Yamagata, Japan
Duration: Apr 19 2017Apr 22 2017

Publication series

Name2017 International Conference on Electronics Packaging, ICEP 2017

Other

Other2017 International Conference on Electronics Packaging, ICEP 2017
CountryJapan
CityTendo, Yamagata
Period4/19/174/22/17

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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    Kanaya, H. (2017). CMOS class-E power amplifier module with CPW bonding wires for 5GHz application. In 2017 International Conference on Electronics Packaging, ICEP 2017 (pp. 237-238). [7939365] (2017 International Conference on Electronics Packaging, ICEP 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2017.7939365