CMOS ultra-wideband low noise amplifier design

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 μm CMOS technology process.

Original languageEnglish
Article number328406
JournalInternational Journal of Microwave Science and Technology
DOIs
Publication statusPublished - May 27 2013

Fingerprint

amplifier design
Broadband amplifiers
Low noise amplifiers
Ultra-wideband (UWB)
low noise
CMOS
amplifiers
broadband
impedance matching
inductors
Frequency bands
isolation
bandwidth
Bandwidth
output

All Science Journal Classification (ASJC) codes

  • Radiation
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

CMOS ultra-wideband low noise amplifier design. / Yousef, K.; Jia, H.; Pokharel, R.; Allam, A.; Ragab, M.; Kanaya, H.; Yoshida, K.

In: International Journal of Microwave Science and Technology, 27.05.2013.

Research output: Contribution to journalArticle

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AU - Yoshida, K.

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