CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor

K. Yousef, H. Jia, R. Pokharel, A. Allam, M. Ragab, H. Kanaya, K. Yoshida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

This paper presents the design of a 2-16 GHz ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs a symmetric 3D RF integrated inductor. The UWB LNA has a gain of 11 ± 1.0 dB with NF less than 3.25 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

Original languageEnglish
Title of host publication2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
Pages267-269
Number of pages3
DOIs
Publication statusPublished - Dec 1 2013
Event2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 - Sydney, NSW, Australia
Duration: Sep 15 2013Sep 18 2013

Publication series

Name2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013

Other

Other2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
CountryAustralia
CitySydney, NSW
Period9/15/139/18/13

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications

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    Yousef, K., Jia, H., Pokharel, R., Allam, A., Ragab, M., Kanaya, H., & Yoshida, K. (2013). CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor. In 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013 (pp. 267-269). [6663860] (2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013). https://doi.org/10.1109/ICUWB.2013.6663860