TY - GEN
T1 - CMOS ultra-wideband low noise amplifier (UWB-LNA) using symmetric 3D RF integrated inductor
AU - Yousef, K.
AU - Jia, H.
AU - Pokharel, R.
AU - Allam, A.
AU - Ragab, M.
AU - Kanaya, H.
AU - Yoshida, K.
PY - 2013/12/1
Y1 - 2013/12/1
N2 - This paper presents the design of a 2-16 GHz ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs a symmetric 3D RF integrated inductor. The UWB LNA has a gain of 11 ± 1.0 dB with NF less than 3.25 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.
AB - This paper presents the design of a 2-16 GHz ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs a symmetric 3D RF integrated inductor. The UWB LNA has a gain of 11 ± 1.0 dB with NF less than 3.25 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8V supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.
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U2 - 10.1109/ICUWB.2013.6663860
DO - 10.1109/ICUWB.2013.6663860
M3 - Conference contribution
AN - SCOPUS:84892526924
SN - 9781479909698
T3 - 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
SP - 267
EP - 269
BT - 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
T2 - 2013 IEEE International Conference on Ultra-Wideband, ICUWB 2013
Y2 - 15 September 2013 through 18 September 2013
ER -