CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si

Shinichi Yoshiura, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Naofumi Shinya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Pages284-285
Number of pages2
Publication statusPublished - Dec 1 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: Oct 5 2010Oct 7 2010

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2010
CountryUnited States
CityAlbany, NY
Period10/5/1010/7/10

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

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    Yoshiura, S., Doi, T., Kurokawa, S., Ohnishi, O., & Shinya, N. (2010). CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si. In Advanced Metallization Conference 2010 (pp. 284-285). (Advanced Metallization Conference (AMC)).