CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si

Shinichi Yoshiura, Toshiro Doi, Syuhei Kurokawa, Osamu Ohnishi, Naofumi Shinya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference 2010
Pages284-285
Number of pages2
Publication statusPublished - Dec 1 2010
EventAdvanced Metallization Conference 2010 - Albany, NY, United States
Duration: Oct 5 2010Oct 7 2010

Publication series

NameAdvanced Metallization Conference (AMC)
ISSN (Print)1540-1766

Other

OtherAdvanced Metallization Conference 2010
CountryUnited States
CityAlbany, NY
Period10/5/1010/7/10

Fingerprint

Cytidine Monophosphate
Polysilicon
Crystal orientation
Single crystals
Processing
Grain boundaries
Crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Industrial and Manufacturing Engineering

Cite this

Yoshiura, S., Doi, T., Kurokawa, S., Ohnishi, O., & Shinya, N. (2010). CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si. In Advanced Metallization Conference 2010 (pp. 284-285). (Advanced Metallization Conference (AMC)).

CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si. / Yoshiura, Shinichi; Doi, Toshiro; Kurokawa, Syuhei; Ohnishi, Osamu; Shinya, Naofumi.

Advanced Metallization Conference 2010. 2010. p. 284-285 (Advanced Metallization Conference (AMC)).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yoshiura, S, Doi, T, Kurokawa, S, Ohnishi, O & Shinya, N 2010, CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si. in Advanced Metallization Conference 2010. Advanced Metallization Conference (AMC), pp. 284-285, Advanced Metallization Conference 2010, Albany, NY, United States, 10/5/10.
Yoshiura S, Doi T, Kurokawa S, Ohnishi O, Shinya N. CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si. In Advanced Metallization Conference 2010. 2010. p. 284-285. (Advanced Metallization Conference (AMC)).
Yoshiura, Shinichi ; Doi, Toshiro ; Kurokawa, Syuhei ; Ohnishi, Osamu ; Shinya, Naofumi. / CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si. Advanced Metallization Conference 2010. 2010. pp. 284-285 (Advanced Metallization Conference (AMC)).
@inproceedings{500418061ee84c10adbc084e3a5f595e,
title = "CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si",
abstract = "To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.",
author = "Shinichi Yoshiura and Toshiro Doi and Syuhei Kurokawa and Osamu Ohnishi and Naofumi Shinya",
year = "2010",
month = "12",
day = "1",
language = "English",
isbn = "9781617822810",
series = "Advanced Metallization Conference (AMC)",
pages = "284--285",
booktitle = "Advanced Metallization Conference 2010",

}

TY - GEN

T1 - CMP characteristic on crystal orientations of single-crystal Si and high-precision planarization CMP of Poly-Si

AU - Yoshiura, Shinichi

AU - Doi, Toshiro

AU - Kurokawa, Syuhei

AU - Ohnishi, Osamu

AU - Shinya, Naofumi

PY - 2010/12/1

Y1 - 2010/12/1

N2 - To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.

AB - To achieve high-precision planarization processing of poly-Si wafers, the authors focus on single-crystal Si wafers which have different crystal orientations of (100), (110) and (111), and consider the correlation of crystal orientations and CMP processing characteristics. Based on these considerations, the authors aim at high-precision planarization processing of Poly-Si wafers, As a result, the crystal grain boundary step in poly-Si wafer was reduced less than 10nm, however, some scratches were observed.

UR - http://www.scopus.com/inward/record.url?scp=79957633608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957633608&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:79957633608

SN - 9781617822810

T3 - Advanced Metallization Conference (AMC)

SP - 284

EP - 285

BT - Advanced Metallization Conference 2010

ER -