Co-doping deposition of p-type ZnO thin films using KrF excimer laser ablation

Kenji Ebihara, Tamiko Ohshima, Tomoaki Ikegami, Jes Asumussen, Raj K. Thareja

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

We report on the attempt to fabricate p-type ZnO thin films using various doping techniques based on the pulsed laser deposition (PLD). As an accepter, we have doped the N atom by using high purity nitric monoxide (NO) ambient gas. NO is dissociated into N and O at an energy of 6.5 eV which is lower than at N2 (9.76 eV). Moreover the dissociation reaction of NO is simpler than other nitrogenous gases such as N2O, NO2, and NH 3. One of our doping techniques is co-doping of Ga and N atom by ablating ZnO:Ga target in NO gas, and another is the ablation of the metal Zn target in NO gas. Both of Ga and N co-doped ZnO films and N doped ZnO films have c-axis orientation as well as undoped ZnO films. The surfaces of these doped films are rough while the undoped ZnO thin film is very smooth and have hexagonally shaped grains. We found it possible to fabricate the p-type ZnO film by ablating the metal Zn target in NO gas.

Original languageEnglish
Pages (from-to)241-246
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume747
Publication statusPublished - 2003
Externally publishedYes
EventCrystalline Oxide-Silicon Heterostructures and Oxide Optoelectronics - Boston, MA, United States
Duration: Dec 2 2002Dec 4 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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