Co-implantation germanium with laser thermal annealing for the formation of np junction

Nur Nadhirah Rashid, Umar Abdul Aziz, Siti Rahmah Aid, Anthony Centeno, Suwa Akira, Hiroshi Ikenoue, Fang Xie

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Germanium (Ge) is a potential candidates to replace silicon (Si) due to its higher carrier mobility, which is the key point for realizing device high-drive-current. However, fabricating highly activated np junction in Ge is challenging due to the severe damages introduced from ion-implantation interact with dopant during subsequent annealing process, and results in dopant deactivation. Further optimization of fabrication process parameters is needed to overcome this problem. Co-implantation technique has gained attention due to its stress-induced carrier activation by implanting two atoms with different size. Combining with laser thermal annealing promise further improvement in activation and recrystallization. In this work, co-implantation of phosphorus (P) and tin (Sn) were performed, followed by KrF laser thermal annealing, to form an np junction in Ge. Laser fluence was varied to achieve np junction with higher activation and recrystallization. It is found that high degree of recrystallization was obtained in higher-fluence annealed sample, with 40% decrease of sheet resistance compare to those of lower-fluence annealed sample. Raman peak shift (≈ 3.5 cm-1) was also observed in the higher-fluence annealed sample, suggesting increase of localized strain in the sample.

Original languageEnglish
Title of host publication17th International Workshop on Junction Technology, IWJT 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages91-93
Number of pages3
ISBN (Electronic)9784863486263
DOIs
Publication statusPublished - Jun 30 2017
Event17th International Workshop on Junction Technology, IWJT 2017 - Kyoto, Japan
Duration: Jun 1 2017Jun 2 2017

Publication series

Name17th International Workshop on Junction Technology, IWJT 2017

Other

Other17th International Workshop on Junction Technology, IWJT 2017
CountryJapan
CityKyoto
Period6/1/176/2/17

Fingerprint

Germanium
Chemical activation
Annealing
Ion implantation
Lasers
Crystallization
Doping (additives)
Tin
Carrier mobility
Sheet resistance
Silicon
Phosphorus
Fabrication
Atoms
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Rashid, N. N., Aziz, U. A., Aid, S. R., Centeno, A., Akira, S., Ikenoue, H., & Xie, F. (2017). Co-implantation germanium with laser thermal annealing for the formation of np junction. In 17th International Workshop on Junction Technology, IWJT 2017 (pp. 91-93). [7966525] (17th International Workshop on Junction Technology, IWJT 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/IWJT.2017.7966525

Co-implantation germanium with laser thermal annealing for the formation of np junction. / Rashid, Nur Nadhirah; Aziz, Umar Abdul; Aid, Siti Rahmah; Centeno, Anthony; Akira, Suwa; Ikenoue, Hiroshi; Xie, Fang.

17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 91-93 7966525 (17th International Workshop on Junction Technology, IWJT 2017).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Rashid, NN, Aziz, UA, Aid, SR, Centeno, A, Akira, S, Ikenoue, H & Xie, F 2017, Co-implantation germanium with laser thermal annealing for the formation of np junction. in 17th International Workshop on Junction Technology, IWJT 2017., 7966525, 17th International Workshop on Junction Technology, IWJT 2017, Institute of Electrical and Electronics Engineers Inc., pp. 91-93, 17th International Workshop on Junction Technology, IWJT 2017, Kyoto, Japan, 6/1/17. https://doi.org/10.23919/IWJT.2017.7966525
Rashid NN, Aziz UA, Aid SR, Centeno A, Akira S, Ikenoue H et al. Co-implantation germanium with laser thermal annealing for the formation of np junction. In 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 91-93. 7966525. (17th International Workshop on Junction Technology, IWJT 2017). https://doi.org/10.23919/IWJT.2017.7966525
Rashid, Nur Nadhirah ; Aziz, Umar Abdul ; Aid, Siti Rahmah ; Centeno, Anthony ; Akira, Suwa ; Ikenoue, Hiroshi ; Xie, Fang. / Co-implantation germanium with laser thermal annealing for the formation of np junction. 17th International Workshop on Junction Technology, IWJT 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 91-93 (17th International Workshop on Junction Technology, IWJT 2017).
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AU - Ikenoue, Hiroshi

AU - Xie, Fang

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