Codeposition on diamond film surface during reactive ion etching in SF6 and O2 plasmas

K. Teii; M. Hori; T. Goto

doi:10.1116/1.1316098

Codeposition on diamond film surface during reactive ion etching in SF₆ and O₂ plasmas

K. Teii, M. Hori, T. Goto

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Polycrystalline diamond films were exposed to electron cyclotron resonance (ECR) SF₆ and O₂ ion etching plasmas. The films were etched by varying an applied negative substrate bias, and the resulting surface was analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.

Original language	English
Pages (from-to)	2779-2784
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1316098
Publication status	Published - Nov 2000
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1316098

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title = "Codeposition on diamond film surface during reactive ion etching in SF6 and O2 plasmas",

abstract = "Polycrystalline diamond films were exposed to electron cyclotron resonance (ECR) SF6 and O2 ion etching plasmas. The films were etched by varying an applied negative substrate bias, and the resulting surface was analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.",

author = "K. Teii and M. Hori and T. Goto",

year = "2000",

month = nov,

doi = "10.1116/1.1316098",

language = "English",

volume = "18",

pages = "2779--2784",

journal = "Journal of Vacuum Science and Technology A",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

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T1 - Codeposition on diamond film surface during reactive ion etching in SF6 and O2 plasmas

AU - Teii, K.

AU - Hori, M.

AU - Goto, T.

PY - 2000/11

Y1 - 2000/11

N2 - Polycrystalline diamond films were exposed to electron cyclotron resonance (ECR) SF6 and O2 ion etching plasmas. The films were etched by varying an applied negative substrate bias, and the resulting surface was analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.

AB - Polycrystalline diamond films were exposed to electron cyclotron resonance (ECR) SF6 and O2 ion etching plasmas. The films were etched by varying an applied negative substrate bias, and the resulting surface was analyzed by scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy.

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DO - 10.1116/1.1316098

M3 - Article

AN - SCOPUS:0034318783

SN - 0734-2101

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 6

ER -

Codeposition on diamond film surface during reactive ion etching in SF₆ and O₂ plasmas

Abstract

All Science Journal Classification (ASJC) codes

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