TY - JOUR
T1 - Coexistence of two-dimensional and three-dimensional Shubnikov-de Haas oscillations in Ar+-irradiated KTaO3
AU - Harashima, S.
AU - Bell, C.
AU - Kim, M.
AU - Yajima, T.
AU - Hikita, Y.
AU - Hwang, H. Y.
N1 - Copyright:
Copyright 2013 Elsevier B.V., All rights reserved.
PY - 2013/8/2
Y1 - 2013/8/2
N2 - We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.
AB - We report electron doping in the surface vicinity of KTaO3 by inducing oxygen vacancies via Ar+ irradiation. The doped electrons have high mobility (>104 cm2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar+ irradiation serves as a flexible tool to study low-dimensional quantum transport in 5d semiconducting oxides.
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U2 - 10.1103/PhysRevB.88.085102
DO - 10.1103/PhysRevB.88.085102
M3 - Article
AN - SCOPUS:84884524393
VL - 88
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
SN - 1098-0121
IS - 8
M1 - 085102
ER -