Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization

T. Sadoh, M. Kurosawa, K. Toko, M. Miyao

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1 Citation (Scopus)


In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced regions of two growth-fronts in GOI stripes, scanning electron microscopy and transmission electron microscopy analyses are performed. These analyses reveal that lattice planes of two growth-fronts coherently align without strains for short growth-distance (≤ 5 μm). The lattice planes at growth-fronts start to tilt gradually for growth-distance above 5 μm. For intermediate growth-distance (5-150 μm), slightly-tilting lattice-planes coherently align without generating any defects, where locally-distributed strains are induced in the coalesced regions. On the other hand, for long growth-distance (≥ 150 μm), grain-boundaries are generated in coalesced regions, and the locally-distributed strains are relaxed. The coherent lattice-alignment for growth-distance below 150 μm is attributed to atomic reordering in the coalesced regions, where coalescence occurs at high temperatures around the solidification point of Ge.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalThin Solid Films
Publication statusPublished - Apr 30 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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