In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced regions of two growth-fronts in GOI stripes, scanning electron microscopy and transmission electron microscopy analyses are performed. These analyses reveal that lattice planes of two growth-fronts coherently align without strains for short growth-distance (≤ 5 μm). The lattice planes at growth-fronts start to tilt gradually for growth-distance above 5 μm. For intermediate growth-distance (5-150 μm), slightly-tilting lattice-planes coherently align without generating any defects, where locally-distributed strains are induced in the coalesced regions. On the other hand, for long growth-distance (≥ 150 μm), grain-boundaries are generated in coalesced regions, and the locally-distributed strains are relaxed. The coherent lattice-alignment for growth-distance below 150 μm is attributed to atomic reordering in the coalesced regions, where coalescence occurs at high temperatures around the solidification point of Ge.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry