Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization

Taizoh Sadoh, M. Kurosawa, K. Toko, M. Miyao

Research output: Contribution to journalArticle

Abstract

In rapid-melting-crystallization of network Ge-on-insulator (GOI), coalescence of growth-fronts inevitably occurs. To clarify crystallinity of the coalesced regions of two growth-fronts in GOI stripes, scanning electron microscopy and transmission electron microscopy analyses are performed. These analyses reveal that lattice planes of two growth-fronts coherently align without strains for short growth-distance (≤ 5 μm). The lattice planes at growth-fronts start to tilt gradually for growth-distance above 5 μm. For intermediate growth-distance (5-150 μm), slightly-tilting lattice-planes coherently align without generating any defects, where locally-distributed strains are induced in the coalesced regions. On the other hand, for long growth-distance (≥ 150 μm), grain-boundaries are generated in coalesced regions, and the locally-distributed strains are relaxed. The coherent lattice-alignment for growth-distance below 150 μm is attributed to atomic reordering in the coalesced regions, where coalescence occurs at high temperatures around the solidification point of Ge.

Original languageEnglish
Pages (from-to)135-138
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

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Crystallization
Melting
melting
crystallization
Coalescence
coalescing
insulators
solidification
Solidification
crystallinity
Grain boundaries
grain boundaries
alignment
Transmission electron microscopy
Defects
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization. / Sadoh, Taizoh; Kurosawa, M.; Toko, K.; Miyao, M.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 135-138.

Research output: Contribution to journalArticle

Sadoh, Taizoh ; Kurosawa, M. ; Toko, K. ; Miyao, M. / Coherent lateral-growth of Ge over insulating film by rapid-melting- crystallization. In: Thin Solid Films. 2014 ; Vol. 557. pp. 135-138.
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