Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain

Gou Nakagawa; Tanemasa Asano

Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain

Integrated Electronic Systems

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.

Original language	English
Title of host publication	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages	503-508
Number of pages	6
Publication status	Published - Jun 12 2007
Event	2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 18 2006 → Apr 20 2006

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	910
ISSN (Print)	0272-9172

Other

Other	2006 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/18/06 → 4/20/06

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain. / Nakagawa, Gou; Asano, Tanemasa.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006. 2007. p. 503-508 (Materials Research Society Symposium Proceedings; Vol. 910).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{754408aa055d42a4b1777f3045a47020,

title = "Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain",

abstract = "A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.",

author = "Gou Nakagawa and Tanemasa Asano",

year = "2007",

month = jun,

day = "12",

language = "English",

isbn = "1558998667",

series = "Materials Research Society Symposium Proceedings",

pages = "503--508",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006",

note = "2006 MRS Spring Meeting ; Conference date: 18-04-2006 Through 20-04-2006",

}

TY - GEN

T1 - Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain

AU - Nakagawa, Gou

AU - Asano, Tanemasa

PY - 2007/6/12

Y1 - 2007/6/12

N2 - A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.

AB - A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.

UR - http://www.scopus.com/inward/record.url?scp=34249952020&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34249952020&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:34249952020

SN - 1558998667

SN - 9781558998667

T3 - Materials Research Society Symposium Proceedings

SP - 503

EP - 508

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006

T2 - 2006 MRS Spring Meeting

Y2 - 18 April 2006 through 20 April 2006

ER -

Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this