Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain

Gou Nakagawa, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A novel method of locating Si thin-film grains by combining metal nano-imprint and excimer laser annealing (ELA) is demonstrated. Metal nano-imprint at the a-Si film surface is used for the purpose of creating Si crystal nuclei which act as the seed for the subsequent crystallization by using ELA. The annealing to form nuclei at imprinted sites was carried out at temperatures below 450°C. ELA using XeCl laser of the sample with capping SiOx film resulted in the formation of over 2.0 μ m-sized Si crystal grains at controlled position. Electron back-scattering pattern (EBSP) analysis showed that about 75% of the boundaries inside the location-controlled grains were the coincidence site lattice boundaries.

Original languageEnglish
Title of host publicationAmorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
Pages503-508
Number of pages6
Publication statusPublished - Jun 12 2007
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 20 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume910
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/20/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Nakagawa, G., & Asano, T. (2007). Combination of metal nano-imprint and excimer laser annealing for location control of Si thin-film grain. In Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006 (pp. 503-508). (Materials Research Society Symposium Proceedings; Vol. 910).