TY - JOUR
T1 - Combinatorial approach to thin-film transistors using multicomponent semiconductor channels
T2 - An application to amorphous oxide semiconductors in In-Ga-Zn-O system
AU - Iwasaki, Tatsuya
AU - Itagaki, Naho
AU - Den, Tohru
AU - Kumomi, Hideya
AU - Nomura, Kenji
AU - Kamiya, Toshio
AU - Hosono, Hideo
N1 - Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007
Y1 - 2007
N2 - A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.
AB - A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.
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U2 - 10.1063/1.2749177
DO - 10.1063/1.2749177
M3 - Article
AN - SCOPUS:34250646701
VL - 90
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 24
M1 - 242114
ER -