Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Tatsuya Iwasaki; Naho Itagaki; Tohru Den; Hideya Kumomi; Kenji Nomura; Toshio Kamiya; Hideo Hosono

doi:10.1063/1.2749177

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Research output: Contribution to journal › Article › peer-review

206 Citations (Scopus)

Abstract

A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.

Original language	English
Article number	242114
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2749177
Publication status	Published - 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2749177

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Combinatorial approach to thin-film transistors using multicomponent semiconductor channels : An application to amorphous oxide semiconductors in In-Ga-Zn-O system. / Iwasaki, Tatsuya; Itagaki, Naho; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo.

In: Applied Physics Letters, Vol. 90, No. 24, 242114, 2007.

Research output: Contribution to journal › Article › peer-review

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AU - Hosono, Hideo

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Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Abstract

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