A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)