Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Tatsuya Iwasaki; Naho Itagaki; Tohru Den; Hideya Kumomi; Kenji Nomura; Toshio Kamiya; Hideo Hosono

doi:10.1063/1.2749177

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Research output: Contribution to journal › Article

198 Citations (Scopus)

Abstract

A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.

Original language	English
Article number	242114
Journal	Applied Physics Letters
Volume	90
Issue number	24
DOIs	https://doi.org/10.1063/1.2749177
Publication status	Published - Jun 22 2007
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2749177

Fingerprint Dive into the research topics of 'Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system'. Together they form a unique fingerprint.

Cite this

Iwasaki, T., Itagaki, N., Den, T., Kumomi, H., Nomura, K., Kamiya, T., & Hosono, H. (2007). Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system. Applied Physics Letters, 90(24), [242114]. https://doi.org/10.1063/1.2749177

Combinatorial approach to thin-film transistors using multicomponent semiconductor channels : An application to amorphous oxide semiconductors in In-Ga-Zn-O system. / Iwasaki, Tatsuya; Itagaki, Naho; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo.

In: Applied Physics Letters, Vol. 90, No. 24, 242114, 22.06.2007.

Research output: Contribution to journal › Article

@article{a6c4cb5830b344718986478454b8c681,

title = "Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system",

abstract = "A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.",

author = "Tatsuya Iwasaki and Naho Itagaki and Tohru Den and Hideya Kumomi and Kenji Nomura and Toshio Kamiya and Hideo Hosono",

year = "2007",

month = jun,

day = "22",

doi = "10.1063/1.2749177",

language = "English",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Combinatorial approach to thin-film transistors using multicomponent semiconductor channels

T2 - An application to amorphous oxide semiconductors in In-Ga-Zn-O system

AU - Iwasaki, Tatsuya

AU - Itagaki, Naho

AU - Den, Tohru

AU - Kumomi, Hideya

AU - Nomura, Kenji

AU - Kamiya, Toshio

AU - Hosono, Hideo

PY - 2007/6/22

Y1 - 2007/6/22

N2 - A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.

AB - A combinatorial approach was applied to thin-film transistors (TFTs) using amorphous In-Ga-Zn-O semiconductor channels. A large number of TFTs, having n -type channels with different chemical compositions, were fabricated simultaneously on a substrate. A systematic relation was clarified among the compositional ratio of In:Ga:Zn, oxygen partial pressure in film deposition atmosphere, and TFT characteristics. The results provide an experimental basis to understand the roles of each metallic element in the In-Ga-Zn-O system. This information leads to a guideline to tune the metallic compositions for required TFT specifications.

UR - http://www.scopus.com/inward/record.url?scp=34250646701&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250646701&partnerID=8YFLogxK

U2 - 10.1063/1.2749177

DO - 10.1063/1.2749177

M3 - Article

AN - SCOPUS:34250646701

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

M1 - 242114

ER -