Combinatorial deposition of microcrystalline silicon films using multihollow discharge plasma chemical vapor deposition

Kazunori Koga, Takeaki Matsunaga, Yeonwon Kim, Kenta Nakahara, Daisuke Yamashita, Hidefumi Matsuzaki, Kunihiro Kamataki, Giichiro Uchida, Naho Itagaki, Masaharu Shiratani

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A high-pressure depletion method using plasma chemical vapor deposition (CVD) is often used to deposit hydrogenated microcrystalline silicon (c-Si:H) films of a low defect density at a high deposition rate. To understand proper deposition conditions of c-Si:H films for a high-pressure depletion method, Si films were deposited in a combinatorial way using a multihollow discharge plasma CVD method by which fluxes of H and SiH3 radicals and their flux ratio can be varied with the distance from the discharges. The higher gas pressure brings about the higher deposition rate, whereas the process window of device quality -c-Si:H films becomes quite narrower for the higher gas pressure.

Original languageEnglish
Article number01AD02
JournalJapanese journal of applied physics
Volume51
Issue number1 PART 2
DOIs
Publication statusPublished - Jan 1 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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