Combinatorial plasma etching, which can be used to acquire large databases and to establish process-science map, is proposed for developing a process for etching low-κ dielectric films. This process promises to save the cost and time spent on accumulating scientific databases for optimizing etching processes since it can acquire many results in a single operation. We interpreted the etching characteristics by using internal parameters such as the ion and the radical densities. By doing this, it is possible to eliminate the dependence of the etching characteristics on the etching system.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)