Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor

Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The device characteristics of thin-film transistors (TFTs) having amorphous In-Ga-Zn-O channel layers with various chemical compositions were studied by using combinatorial synthesis techniques. The In-Ga-Zn-O films were prepared by a radio-frequency magnetron sputtering method at room temperature in mixed-gas atmosphere of argon and oxygen. The TFT libraries enabled us to systematically survey the device characteristics of the TFTs in a wide compositional range of channel materials. It is found that the TFT characteristics are very sensitive to the chemical composition ratio of In:Ga:Zn and depend also on the oxygen partial pressure during deposition. Some devices exhibited good performance of the field-effect mobility of ∼10 cm2V-1sec -1 and on-to-off current ratio of ∼108.

Original languageEnglish
Title of host publicationCurrent and Future Trends of Functional Oxide Films
Pages80-85
Number of pages6
Publication statusPublished - Dec 1 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 18 2006Apr 20 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume928
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/18/064/20/06

Fingerprint

Thin film transistors
Semiconductor materials
Oxygen
Argon
Chemical analysis
Partial pressure
Magnetron sputtering
Gases
Temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Iwasaki, T., Itagaki, N., Den, T., Kumomi, H., Nomura, K., Kamiya, T., & Hosono, H. (2006). Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor. In Current and Future Trends of Functional Oxide Films (pp. 80-85). (Materials Research Society Symposium Proceedings; Vol. 928).

Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor. / Iwasaki, Tatsuya; Itagaki, Naho; Den, Tohru; Kumomi, Hideya; Nomura, Kenji; Kamiya, Toshio; Hosono, Hideo.

Current and Future Trends of Functional Oxide Films. 2006. p. 80-85 (Materials Research Society Symposium Proceedings; Vol. 928).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iwasaki, T, Itagaki, N, Den, T, Kumomi, H, Nomura, K, Kamiya, T & Hosono, H 2006, Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor. in Current and Future Trends of Functional Oxide Films. Materials Research Society Symposium Proceedings, vol. 928, pp. 80-85, 2006 MRS Spring Meeting, San Francisco, CA, United States, 4/18/06.
Iwasaki T, Itagaki N, Den T, Kumomi H, Nomura K, Kamiya T et al. Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor. In Current and Future Trends of Functional Oxide Films. 2006. p. 80-85. (Materials Research Society Symposium Proceedings).
Iwasaki, Tatsuya ; Itagaki, Naho ; Den, Tohru ; Kumomi, Hideya ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo. / Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor. Current and Future Trends of Functional Oxide Films. 2006. pp. 80-85 (Materials Research Society Symposium Proceedings).
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