Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor

Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

The device characteristics of thin-film transistors (TFTs) having amorphous In-Ga-Zn-O channel layers with various chemical compositions were studied by using combinatorial synthesis techniques. The In-Ga-Zn-O films were prepared by a radio-frequency magnetron sputtering method at room temperature in mixed-gas atmosphere of argon and oxygen. The TFT libraries enabled us to systematically survey the device characteristics of the TFTs in a wide compositional range of channel materials. It is found that the TFT characteristics are very sensitive to the chemical composition ratio of In:Ga:Zn and depend also on the oxygen partial pressure during deposition. Some devices exhibited good performance of the field-effect mobility of ∼10 cm2V-1sec -1 and on-to-off current ratio of ∼108.

Original languageEnglish
Title of host publicationCurrent and Future Trends of Functional Oxide Films
PublisherMaterials Research Society
Pages80-85
Number of pages6
ISBN (Print)1558998853, 9781558998858
DOIs
Publication statusPublished - Jan 1 2006
Externally publishedYes
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume928
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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