Compact Size On-Chip 60 GHz H-Shaped Resonator BPF

Nessim Mahmoud; Adel Barakat; Adel B. Abdel-Rahman; Ahmed Allam; Ramesh K. Pokharel

doi:10.1109/LMWC.2016.2597219

Compact Size On-Chip 60 GHz H-Shaped Resonator BPF

Nessim Mahmoud, Adel Barakat, Adel B. Abdel-Rahman, Ahmed Allam, Ramesh K. Pokharel

Department of I&E Visionaries

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

In this letter, we propose a compact size, small insertion loss 60 GHz on-chip H-shaped resonator bandpass filter (BPF) using 0.18 μm standard CMOS technology. The BPF Size is miniaturized by loading the H-shaped resonator with metal-insulator-metal capacitors at its ends. Besides, two defected ground structure cells are etched under the coupled lines to improve the filter insertion loss. Furthermore, selectivity is enhanced by loading the center of the H-shaped resonator with two unsymmetrical meander line stubs generating two transmission zeroes at 50 and 70 GHz. The fabricated BPF chip size is 240 × 650 μm². The measured insertion loss and fractional bandwidth are 2.5 dB at 60 GHz and 21%, respectively.

Original language	English
Article number	7542143
Pages (from-to)	681-683
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	26
Issue number	9
DOIs	https://doi.org/10.1109/LMWC.2016.2597219
Publication status	Published - Sep 2016

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{17db7f18020e449091d01e7711497343,

title = "Compact Size On-Chip 60 GHz H-Shaped Resonator BPF",

abstract = "In this letter, we propose a compact size, small insertion loss 60 GHz on-chip H-shaped resonator bandpass filter (BPF) using 0.18 μm standard CMOS technology. The BPF Size is miniaturized by loading the H-shaped resonator with metal-insulator-metal capacitors at its ends. Besides, two defected ground structure cells are etched under the coupled lines to improve the filter insertion loss. Furthermore, selectivity is enhanced by loading the center of the H-shaped resonator with two unsymmetrical meander line stubs generating two transmission zeroes at 50 and 70 GHz. The fabricated BPF chip size is 240 × 650 μm2. The measured insertion loss and fractional bandwidth are 2.5 dB at 60 GHz and 21%, respectively.",

author = "Nessim Mahmoud and Adel Barakat and Abdel-Rahman, {Adel B.} and Ahmed Allam and Pokharel, {Ramesh K.}",

year = "2016",

month = sep,

doi = "10.1109/LMWC.2016.2597219",

language = "English",

volume = "26",

pages = "681--683",

journal = "IEEE Microwave and Wireless Components Letters",

issn = "1531-1309",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - Compact Size On-Chip 60 GHz H-Shaped Resonator BPF

AU - Mahmoud, Nessim

AU - Barakat, Adel

AU - Abdel-Rahman, Adel B.

AU - Allam, Ahmed

AU - Pokharel, Ramesh K.

PY - 2016/9

Y1 - 2016/9

N2 - In this letter, we propose a compact size, small insertion loss 60 GHz on-chip H-shaped resonator bandpass filter (BPF) using 0.18 μm standard CMOS technology. The BPF Size is miniaturized by loading the H-shaped resonator with metal-insulator-metal capacitors at its ends. Besides, two defected ground structure cells are etched under the coupled lines to improve the filter insertion loss. Furthermore, selectivity is enhanced by loading the center of the H-shaped resonator with two unsymmetrical meander line stubs generating two transmission zeroes at 50 and 70 GHz. The fabricated BPF chip size is 240 × 650 μm2. The measured insertion loss and fractional bandwidth are 2.5 dB at 60 GHz and 21%, respectively.

AB - In this letter, we propose a compact size, small insertion loss 60 GHz on-chip H-shaped resonator bandpass filter (BPF) using 0.18 μm standard CMOS technology. The BPF Size is miniaturized by loading the H-shaped resonator with metal-insulator-metal capacitors at its ends. Besides, two defected ground structure cells are etched under the coupled lines to improve the filter insertion loss. Furthermore, selectivity is enhanced by loading the center of the H-shaped resonator with two unsymmetrical meander line stubs generating two transmission zeroes at 50 and 70 GHz. The fabricated BPF chip size is 240 × 650 μm2. The measured insertion loss and fractional bandwidth are 2.5 dB at 60 GHz and 21%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84981703908&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84981703908&partnerID=8YFLogxK

U2 - 10.1109/LMWC.2016.2597219

DO - 10.1109/LMWC.2016.2597219

M3 - Article

AN - SCOPUS:84981703908

VL - 26

SP - 681

EP - 683

JO - IEEE Microwave and Wireless Components Letters

JF - IEEE Microwave and Wireless Components Letters

SN - 1531-1309

IS - 9

M1 - 7542143

ER -

Compact Size On-Chip 60 GHz H-Shaped Resonator BPF

Abstract

All Science Journal Classification (ASJC) codes

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