Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh Pokharel; G. Zhang; S. Amalina; Kousuke Hikichi; Shuji Tanaka; Ken Ya Hashimoto; Shinji Taniguchi

doi:10.1109/IMaRC.2015.7411452

Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh Pokharel, G. Zhang, S. Amalina, Kousuke Hikichi, Shuji Tanaka, Ken Ya Hashimoto, Shinji Taniguchi

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

Original language	English
Title of host publication	IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	316-319
Number of pages	4
ISBN (Electronic)	9781509001569
DOIs	https://doi.org/10.1109/IMaRC.2015.7411452
Publication status	Published - Feb 17 2016
Event	IEEE MTT-S International Microwave and RF Conference, IMaRC 2015 - Hyderabad, India Duration: Dec 10 2015 → Dec 12 2015

Publication series

Name	IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

Other

Other	IEEE MTT-S International Microwave and RF Conference, IMaRC 2015
Country	India
City	Hyderabad
Period	12/10/15 → 12/12/15

All Science Journal Classification (ASJC) codes

Computer Networks and Communications

Access to Document

10.1109/IMaRC.2015.7411452

Fingerprint Dive into the research topics of 'Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications'. Together they form a unique fingerprint.

Cite this

Pokharel, R., Zhang, G., Amalina, S., Hikichi, K., Tanaka, S., Hashimoto, K. Y., & Taniguchi, S. (2016). Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. In IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015 (pp. 316-319). [7411452] (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMaRC.2015.7411452

Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. / Pokharel, Ramesh; Zhang, G.; Amalina, S.; Hikichi, Kousuke; Tanaka, Shuji; Hashimoto, Ken Ya; Taniguchi, Shinji.

IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 316-319 7411452 (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pokharel, R, Zhang, G, Amalina, S, Hikichi, K, Tanaka, S, Hashimoto, KY & Taniguchi, S 2016, Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. in IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015., 7411452, IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 316-319, IEEE MTT-S International Microwave and RF Conference, IMaRC 2015, Hyderabad, India, 12/10/15. https://doi.org/10.1109/IMaRC.2015.7411452

Pokharel R, Zhang G, Amalina S, Hikichi K, Tanaka S, Hashimoto KY et al. Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. In IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 316-319. 7411452. (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). https://doi.org/10.1109/IMaRC.2015.7411452

Pokharel, Ramesh ; Zhang, G. ; Amalina, S. ; Hikichi, Kousuke ; Tanaka, Shuji ; Hashimoto, Ken Ya ; Taniguchi, Shinji. / Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 316-319 (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015).

@inproceedings{fc33a78e5be946f5bedfa2a8071fddd2,

title = "Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications",

abstract = "This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.",

author = "Ramesh Pokharel and G. Zhang and S. Amalina and Kousuke Hikichi and Shuji Tanaka and Hashimoto, {Ken Ya} and Shinji Taniguchi",

year = "2016",

month = feb,

day = "17",

doi = "10.1109/IMaRC.2015.7411452",

language = "English",

series = "IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "316--319",

booktitle = "IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015",

address = "United States",

note = "IEEE MTT-S International Microwave and RF Conference, IMaRC 2015 ; Conference date: 10-12-2015 Through 12-12-2015",

}

TY - GEN

T1 - Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

AU - Pokharel, Ramesh

AU - Zhang, G.

AU - Amalina, S.

AU - Hikichi, Kousuke

AU - Tanaka, Shuji

AU - Hashimoto, Ken Ya

AU - Taniguchi, Shinji

PY - 2016/2/17

Y1 - 2016/2/17

N2 - This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

AB - This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

UR - http://www.scopus.com/inward/record.url?scp=84964826479&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84964826479&partnerID=8YFLogxK

U2 - 10.1109/IMaRC.2015.7411452

DO - 10.1109/IMaRC.2015.7411452

M3 - Conference contribution

AN - SCOPUS:84964826479

T3 - IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

SP - 316

EP - 319

BT - IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE MTT-S International Microwave and RF Conference, IMaRC 2015

Y2 - 10 December 2015 through 12 December 2015

ER -