Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh K. Pokharel; G. Zhang; S. Amalina; Kousuke Hikichi; Shuji Tanaka; Ken Ya Hashimoto; Shinji Taniguchi

doi:10.1109/IMaRC.2015.7411452

Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh K. Pokharel, G. Zhang, S. Amalina, Kousuke Hikichi, Shuji Tanaka, Ken Ya Hashimoto, Shinji Taniguchi

Department of I&E Visionaries

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

Original language	English
Title of host publication	IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	316-319
Number of pages	4
ISBN (Electronic)	9781509001569
DOIs	https://doi.org/10.1109/IMaRC.2015.7411452
Publication status	Published - Feb 17 2016
Event	IEEE MTT-S International Microwave and RF Conference, IMaRC 2015 - Hyderabad, India Duration: Dec 10 2015 → Dec 12 2015

Publication series

Name	IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

Other

Other	IEEE MTT-S International Microwave and RF Conference, IMaRC 2015
Country/Territory	India
City	Hyderabad
Period	12/10/15 → 12/12/15

All Science Journal Classification (ASJC) codes

Computer Networks and Communications

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10.1109/IMaRC.2015.7411452

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Pokharel, R. K., Zhang, G., Amalina, S., Hikichi, K., Tanaka, S., Hashimoto, K. Y., & Taniguchi, S. (2016). Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. In IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015 (pp. 316-319). [7411452] (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMaRC.2015.7411452

Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. / Pokharel, Ramesh K.; Zhang, G.; Amalina, S. et al.

IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 316-319 7411452 (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Pokharel, RK, Zhang, G, Amalina, S, Hikichi, K, Tanaka, S, Hashimoto, KY & Taniguchi, S 2016, Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. in IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015., 7411452, IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 316-319, IEEE MTT-S International Microwave and RF Conference, IMaRC 2015, Hyderabad, India, 12/10/15. https://doi.org/10.1109/IMaRC.2015.7411452

Pokharel RK, Zhang G, Amalina S, Hikichi K, Tanaka S, Hashimoto KY et al. Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. In IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 316-319. 7411452. (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). doi: 10.1109/IMaRC.2015.7411452

Pokharel, Ramesh K. ; Zhang, G. ; Amalina, S. et al. / Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 316-319 (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015).

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AB - This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

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Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

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