Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

Frédéric Mercier, Shinichi Nishizawa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalJournal of Crystal Growth
Volume362
Issue number1
DOIs
Publication statusPublished - Jan 1 2013
Externally publishedYes

Fingerprint

Silicon carbide
silicon carbides
Carbon
Magnetic fields
Crystals
carbon
magnetic fields
crystals
Sublimation
Crystallization
Crystal growth
Temperature
sublimation
Mass transfer
mass transfer
silicon carbide
crystal growth
Fluxes
solutes
Heat transfer

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

@article{8005be077e7a453da2adb6e8857aa982,
title = "Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals",
abstract = "We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique.",
author = "Fr{\'e}d{\'e}ric Mercier and Shinichi Nishizawa",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.jcrysgro.2011.11.019",
language = "English",
volume = "362",
pages = "99--102",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

AU - Mercier, Frédéric

AU - Nishizawa, Shinichi

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique.

AB - We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique.

UR - http://www.scopus.com/inward/record.url?scp=84870295238&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870295238&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2011.11.019

DO - 10.1016/j.jcrysgro.2011.11.019

M3 - Article

AN - SCOPUS:84870295238

VL - 362

SP - 99

EP - 102

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -