Comparative numerical study of the effects of rotating and traveling magnetic fields on the carbon transport in the solution growth of SiC crystals

Frédéric Mercier, Shinichi Nishizawa

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We present numerical simulations of the high temperature solution growth (HTSG) of silicon carbide (SiC) crystals. From a global simulation model, we investigate the influence of rotating magnetic fields (RMFs) and traveling magnetic fields (TMFs) on the crystal growth rate. The results reveal that heat and mass transfers are affected by magnetic fields. We show that direction of the solute flux must be controlled to increase the growth rate. For example, in presence of TMFs directed downwards the growth rate increases up to three times compared with the pure thermal HTSG. The proposed HTSG system coupled with magnetic fields has the same growth rate possibility as in the sublimation technique.

Original languageEnglish
Pages (from-to)99-102
Number of pages4
JournalJournal of Crystal Growth
Volume362
Issue number1
DOIs
Publication statusPublished - Jan 1 2013
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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