Comparative study of Al-induced crystallization for poly-Si and Ge on insulating film

Y. Tsumura, I. Nakao, H. Kanno, A. Kenjo, Taizoh Sadoh, M. Miyao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Al-induced crystallization (AIC) of Si and Ge has been comparatively investigated to realize poly-Si and poly-Ge layers on insulating films. For amorphous-Si (a-Si)/Al stacked structures, poly-Si oriented to the (111) direction was formed after annealing (450°C, 40h), and inversion of Si/Al layers occurred completely. On the other hand, poly-Ge with random orientations was formed in the local areas (diameter: 20 μm) of the Al layers after annealing (350°C, 150h) for a-Ge/Al stacked structures. In addition, inversion of Ge/Al layers did not occur. Understanding of AIC of Ge is necessary to establish a new technique for formation of high-quality poly-SiGe at low temperatures.

Original languageEnglish
Title of host publicationECS Transactions - 5th International Symposium on ULSI Process Integration
Pages395-400
Number of pages6
Edition6
DOIs
Publication statusPublished - Dec 1 2007
Event5th International Symposium on ULSI Process Integration - 212th ECS Meeting - Washington, DC, United States
Duration: Oct 7 2007Oct 12 2007

Publication series

NameECS Transactions
Number6
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other5th International Symposium on ULSI Process Integration - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period10/7/0710/12/07

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Tsumura, Y., Nakao, I., Kanno, H., Kenjo, A., Sadoh, T., & Miyao, M. (2007). Comparative study of Al-induced crystallization for poly-Si and Ge on insulating film. In ECS Transactions - 5th International Symposium on ULSI Process Integration (6 ed., pp. 395-400). (ECS Transactions; Vol. 11, No. 6). https://doi.org/10.1149/1.2778396