Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases

Reiji Hattori, K. Shirakawa, J. Shirafuji

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.

Original languageEnglish
Pages (from-to)649-652
Number of pages4
JournalSolid State Communications
Volume62
Issue number9
DOIs
Publication statusPublished - Jan 1 1987
Externally publishedYes

Fingerprint

Glow discharges
glow discharges
Gases
Electron mobility
gases
electron mobility
electrons
Temperature
Substrates
monosilane
Electron Transport
temperature dependence
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases. / Hattori, Reiji; Shirakawa, K.; Shirafuji, J.

In: Solid State Communications, Vol. 62, No. 9, 01.01.1987, p. 649-652.

Research output: Contribution to journalArticle

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