Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry