Comparative study on electron transport in glow discharge a-Si:H films prepared from mono- and disilane gases

R. Hattori, K. Shirakawa, J. Shirafuji

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Electron transport of glow discharge a-Si:H films prepared from disilane has been studied by means of time-of-flight measurement and compared with those of monosilane films. The room-temperature electron mobility in disilane films deposited at substrate temperatures above 190°C is comparable to that for monosilane films. However, the temperature dependence of the electron mobility reveals a significant difference in the tail state distribution between these films. This suggests that atomistic local structures of a-Si:H films depend critically on source gas species. The difference in the local structures of these films is also demonstrated by the substrate temperature dependence of the electron mobility; the room-temperature electron mobility for disilane films decreases more rapidly with decreasing substrate temperature below 180°C than the case for monosilane films.

Original languageEnglish
Pages (from-to)649-652
Number of pages4
JournalSolid State Communications
Volume62
Issue number9
DOIs
Publication statusPublished - Jun 1987
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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