Comparison and application of several turbulence models in simulation of crystal growth

Xin Liu, Li Jun Liu, Yuan Wang, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

A typical industry-scale CZ furnace for growing single crystal of silicon was numerically discretized with multi-block structured grids. All heat transfer modes in the furnace, including the melt convection, solid conduction and surface radiation, are solved together in a conjugated way. To model the melt turbulence of Si in the crucible, a few turbulence models were deliberately selected and applied. These turbulence models include the low Reynolds number k-ε model, the standard k-ε model and a modified two-layer turbulence model. The simulation results obtained with these turbulence models were compared. The comparison shows that the melt flow structures predicted with these turbulence models are quite similar, while the difference in the predicted crystal-melt interface shape is obvious due to different treatment of the near wall turbulence in each model.

Original languageEnglish
Pages (from-to)1500-1503
Number of pages4
JournalKung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics
Volume31
Issue number9
Publication statusPublished - Sep 1 2010

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turbulence models
Crystallization
Turbulence models
Crystal growth
crystal growth
simulation
furnaces
Furnaces
Turbulence
turbulence
Crucibles
low Reynolds number
Silicon
crucibles
Flow structure
Reynolds number
convection
heat transfer
industries
Single crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Comparison and application of several turbulence models in simulation of crystal growth. / Liu, Xin; Liu, Li Jun; Wang, Yuan; Kakimoto, Koichi.

In: Kung Cheng Je Wu Li Hsueh Pao/Journal of Engineering Thermophysics, Vol. 31, No. 9, 01.09.2010, p. 1500-1503.

Research output: Contribution to journalArticle

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