Comparison between Ar+CH4 cathode and anode coupling chemical vapor depositions of hydrogenated amorphous carbon films

Sung Hwa Hwang, Ryosuke Iwamoto, Takamasa Okumura, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Tatsuyuki Nakatani, Masaharu Shiratani

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1 Citation (Scopus)

Abstract

This research focuses on the comparison between cathode- and anode coupling deposition characteristics of hydrogenated amorphous carbon (a-C:H) using the capacitively coupled plasma (CCP) method. a-C:H films were fabricated by Ar+CH4 CCP chemical vapor deposition. The cathode and anode coupling depositions were simultaneously performed in a single CCP reactor. Compared to the anode coupling process, the cathode coupling process provides high-kinetic-energy ions impinging on the film surface. The cathode coupling process produced a-C:H films with a mass density of 1.75 g/cm3 and a hydrogen content of 36% at a deposition rate of 22.9 nm/min. By contrast, the anode coupling process resulted in a-C:H films with a mass density of 1.4 g/cm3 and a hydrogen content of 50% at a deposition rate of 10 nm/min. Raman spectroscopy shows that a-C:H films in the cathode coupling process have a highly disordered bonding, whereas a-C:H films in the anode coupling process have highly strained graphite.

Original languageEnglish
Article number138701
JournalThin Solid Films
Volume729
DOIs
Publication statusPublished - Jul 1 2021

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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