Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Kazunori Koga; Takeaki Matsunaga; William Makoto Nakamura; Kenta Nakahara; Yuuki Kawashima; Giichiro Uchida; Kunihiro Kamataki; Naho Itagaki; Masaharu Shiratani

doi:10.1016/j.tsf.2011.01.408

Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Kazunori Koga, Takeaki Matsunaga, William Makoto Nakamura, Kenta Nakahara, Yuuki Kawashima, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.

Original language	English
Pages (from-to)	6896-6898
Number of pages	3
Journal	Thin Solid Films
Volume	519
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2011.01.408
Publication status	Published - Aug 1 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film. / Koga, Kazunori; Matsunaga, Takeaki; Nakamura, William Makoto; Nakahara, Kenta; Kawashima, Yuuki; Uchida, Giichiro; Kamataki, Kunihiro ; Itagaki, Naho ; Shiratani, Masaharu.

In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6896-6898.

Research output: Contribution to journal › Article › peer-review

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abstract = "We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.",

author = "Kazunori Koga and Takeaki Matsunaga and Nakamura, {William Makoto} and Kenta Nakahara and Yuuki Kawashima and Giichiro Uchida and Kunihiro Kamataki and Naho Itagaki and Masaharu Shiratani",

note = "Funding Information: This work was partly supported by Japan Society for the Promotion of Science (JSPS) and Core Research for Evolutional Science and Technology (CREST) by Japan Science and Technology Agency (JST). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Koga, Kazunori

AU - Matsunaga, Takeaki

AU - Nakamura, William Makoto

AU - Nakahara, Kenta

AU - Kawashima, Yuuki

AU - Uchida, Giichiro

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Shiratani, Masaharu

N1 - Funding Information: This work was partly supported by Japan Society for the Promotion of Science (JSPS) and Core Research for Evolutional Science and Technology (CREST) by Japan Science and Technology Agency (JST). Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2011/8/1

Y1 - 2011/8/1

N2 - We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.

AB - We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.

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Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

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