Abstract
We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.
| Original language | English |
|---|---|
| Pages (from-to) | 6896-6898 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 519 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - Aug 1 2011 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film. / Koga, Kazunori; Matsunaga, Takeaki; Nakamura, William Makoto; Nakahara, Kenta; Kawashima, Yuuki; Uchida, Giichiro; Kamataki, Kunihiro; Itagaki, Naho; Shiratani, Masaharu.
In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6896-6898.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film
AU - Koga, Kazunori
AU - Matsunaga, Takeaki
AU - Nakamura, William Makoto
AU - Nakahara, Kenta
AU - Kawashima, Yuuki
AU - Uchida, Giichiro
AU - Kamataki, Kunihiro
AU - Itagaki, Naho
AU - Shiratani, Masaharu
PY - 2011/8/1
Y1 - 2011/8/1
N2 - We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.
AB - We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.
UR - http://www.scopus.com/inward/record.url?scp=80051544408&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80051544408&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2011.01.408
DO - 10.1016/j.tsf.2011.01.408
M3 - Article
AN - SCOPUS:80051544408
VL - 519
SP - 6896
EP - 6898
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 20
ER -