Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Kazunori Koga; Takeaki Matsunaga; William Makoto Nakamura; Kenta Nakahara; Yuuki Kawashima; Giichiro Uchida; Kunihiro Kamataki; Naho Itagaki; Masaharu Shiratani

doi:10.1016/j.tsf.2011.01.408

Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

Kazunori Koga, Takeaki Matsunaga, William Makoto Nakamura, Kenta Nakahara, Yuuki Kawashima, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Masaharu Shiratani

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.

Original language	English
Pages (from-to)	6896-6898
Number of pages	3
Journal	Thin Solid Films
Volume	519
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2011.01.408
Publication status	Published - Aug 1 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2011.01.408

Fingerprint Dive into the research topics of 'Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film'. Together they form a unique fingerprint.

Cite this

Koga, K., Matsunaga, T., Nakamura, W. M., Nakahara, K., Kawashima, Y., Uchida, G., Kamataki, K., Itagaki, N., & Shiratani, M. (2011). Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film. Thin Solid Films, 519(20), 6896-6898. https://doi.org/10.1016/j.tsf.2011.01.408

Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film. / Koga, Kazunori; Matsunaga, Takeaki; Nakamura, William Makoto; Nakahara, Kenta; Kawashima, Yuuki; Uchida, Giichiro; Kamataki, Kunihiro ; Itagaki, Naho ; Shiratani, Masaharu.

In: Thin Solid Films, Vol. 519, No. 20, 01.08.2011, p. 6896-6898.

Research output: Contribution to journal › Article

@article{33a8ebc0838547c8b65eaf584be83e7f,

title = "Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film",

abstract = "We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.",

author = "Kazunori Koga and Takeaki Matsunaga and Nakamura, {William Makoto} and Kenta Nakahara and Yuuki Kawashima and Giichiro Uchida and Kunihiro Kamataki and Naho Itagaki and Masaharu Shiratani",

year = "2011",

month = aug,

day = "1",

doi = "10.1016/j.tsf.2011.01.408",

language = "English",

volume = "519",

pages = "6896--6898",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "20",

}

TY - JOUR

T1 - Comparison between silicon thin films with and without incorporating crystalline silicon nanoparticles into the film

AU - Koga, Kazunori

AU - Matsunaga, Takeaki

AU - Nakamura, William Makoto

AU - Nakahara, Kenta

AU - Kawashima, Yuuki

AU - Uchida, Giichiro

AU - Kamataki, Kunihiro

AU - Itagaki, Naho

AU - Shiratani, Masaharu

PY - 2011/8/1

Y1 - 2011/8/1

N2 - We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.

AB - We have deposited Si thin films using a multi-hollow discharge plasma CVD method to compare properties of the films with and without incorporating crystalline Si nanoparticles into the films. After the deposition of the films, we have evaluated crystallization of the films by irradiating laser. We have found that a laser power at which crystalline Si nanoparticles embedded a-Si:H films start to be crystallized is lower than that for a-Si:H films without the nanoparticles. The incorporation of the nanoparticles has no effect on the defect density of the films. These results suggest incorporation of crystalline Si nanoparticles into the films play a role of crystallization of Si films during the deposition.

UR - http://www.scopus.com/inward/record.url?scp=80051544408&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051544408&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2011.01.408

DO - 10.1016/j.tsf.2011.01.408

M3 - Article

AN - SCOPUS:80051544408

VL - 519

SP - 6896

EP - 6898

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 20

ER -