Comparison of electrical properties of (100) / (001)-oriented epitaxial Pb(Zr0.35, Ti0.65)O3 thin films with the same (001) domain fraction grown on (100)Si and (100)SrTiO3 substrates

Yong Kwan Kim, Hitoshi Morioka, Shoji Okamoto, Takayuki Watanabe, Shintaro Yokoyama, Akihiro Sumi, Hiroshi Funakubo, Keisuke Saito

Research output: Contribution to journalArticle

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Abstract

Epitaxial tetragonal Pb (Zr0.35 Ti0.65) O3 (PZT) films with a (100) (001) orientation and one and three in-plane variants were grown, respectively, on (100)c SrRu O3 (100) SrTi O3 and (100)c SrRu O3 (111) Pt (100) yttria stabilized zirconia (YSZ) (100) Si substrates by pulsed-metalorganic chemical vapor deposition, and their domain structure and electrical properties were investigated systematically. PZT films with the same volume fraction of c domains were grown on SrTi O3 and Si substrates by controlling the deposition temperature and film thickness. The relative dielectric constants at 1 kHz were 370 and 450, respectively, for the films on the SrTi O3 and on the Si, even though both films had the same volume fractions, whereas the dielectric losses were almost the same. The remanent polarization and coercive field at the maximum applied electric field of 350 kVcm were almost the same for both films, 30 μC cm2 and 135 kVcm, respectively. These results suggest that the key factor determining the ferroelectric property in epitaxial ferroelectric film is the relative volume fraction of c domains.

Original languageEnglish
Article number182907
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number18
DOIs
Publication statusPublished - Oct 31 2005

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electrical properties
thin films
yttria-stabilized zirconia
dielectric loss
metalorganic chemical vapor deposition
film thickness
permittivity
electric fields
polarization
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Comparison of electrical properties of (100) / (001)-oriented epitaxial Pb(Zr0.35, Ti0.65)O3 thin films with the same (001) domain fraction grown on (100)Si and (100)SrTiO3 substrates. / Kim, Yong Kwan; Morioka, Hitoshi; Okamoto, Shoji; Watanabe, Takayuki; Yokoyama, Shintaro; Sumi, Akihiro; Funakubo, Hiroshi; Saito, Keisuke.

In: Applied Physics Letters, Vol. 87, No. 18, 182907, 31.10.2005, p. 1-3.

Research output: Contribution to journalArticle

Kim, Yong Kwan ; Morioka, Hitoshi ; Okamoto, Shoji ; Watanabe, Takayuki ; Yokoyama, Shintaro ; Sumi, Akihiro ; Funakubo, Hiroshi ; Saito, Keisuke. / Comparison of electrical properties of (100) / (001)-oriented epitaxial Pb(Zr0.35, Ti0.65)O3 thin films with the same (001) domain fraction grown on (100)Si and (100)SrTiO3 substrates. In: Applied Physics Letters. 2005 ; Vol. 87, No. 18. pp. 1-3.
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