Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium

Nur Nadhirah Mohamad Rashid, Umar Abdul Aziz, Siti Rahmah Aid, Anthony Centeno, Satoru Matsumoto, Fang Xie, Akira Suwa, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge is a promising candidate to replace Si since the Si downscaling is approaching its limit. Further optimization in ion implantation process parameters is required in order to fabricate highly activated n-type junction in Ge. The co-implantation technique is one of interest due to the enhanced active carrier concentration attributed to the stress associated with atomic size of the non-dopant. In this work, phosphorus (P) and tin (Sn) have been selected as dopant and non-dopant atoms for the co-implantation process. Theoretical analysis on dopant distribution in the substrate was performed using TRIM software. The calculation predicted a maximum concentration of n-type dopant up to 1E20 cm-3. Fabricated samples were then experimentally analyzed using SIMS for depth profiling. A difference of less than one order of magnitude was observed from the comparison of both results. The difference between TRIM and SIMS is attributed to the sputtering effect and the rise of temperature during co-implantation process.

Original languageEnglish
Title of host publicationIEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages389-392
Number of pages4
ISBN (Electronic)9781509009251
DOIs
Publication statusPublished - Oct 12 2017
Event2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016 - Kota Kinabalu, Sabah, Malaysia
Duration: Nov 20 2016Nov 22 2016

Publication series

NameIEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference

Other

Other2016 IEEE Industrial Electronics and Applications Conference, IEACon 2016
CountryMalaysia
CityKota Kinabalu, Sabah
Period11/20/1611/22/16

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All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

Rashid, N. N. M., Aziz, U. A., Aid, S. R., Centeno, A., Matsumoto, S., Xie, F., ... Ikenoue, H. (2017). Comparison of theoretical and experimental analysis of P and Sn co-implantation in germanium. In IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference (pp. 389-392). [8067411] (IEACon 2016 - 2016 IEEE Industrial Electronics and Applications Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEACON.2016.8067411