Comparison of theoretical limits between superjunction and field plate structures

Research output: Chapter in Book/Report/Conference proceedingConference contribution

19 Citations (Scopus)

Abstract

This paper reports that theoretical limits for the superjunction (SJ) and field plate (FP) structures and the optimum application voltage range is discussed with the previous experimental data. The specific on-resistance limit of the SJ structure is as same as that of the FP structure and inverse proportional to the cell aspect ratio γSJ and γFP (= drift thickness/lateral cell pitch). The cell aspect ratio can be easily increased with the breakdown voltage due to the drift thickness. On the other hand, at the low voltage device, the aspect ratio is determined by the lateral cell pitch due to the process technology. At the FP structure, the insulator thickness interferes to increase the aspect ratio. From the viewpoints of the aspect ratio limit and the output capacitance stored energy (Eoss), the SJ structure is effective for high voltage MOSFETs and the FP structure is effective for low voltage ones. The border of the optimum application voltage is 100-200 V.

Original languageEnglish
Title of host publication2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages241-244
Number of pages4
ISBN (Print)9781467351348
DOIs
Publication statusPublished - Jan 1 2013
Externally publishedYes
Event2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 - Kanazawa, Japan
Duration: May 26 2013May 30 2013

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013
CountryJapan
CityKanazawa
Period5/26/135/30/13

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Saito, W. (2013). Comparison of theoretical limits between superjunction and field plate structures. In 2013 25th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2013 (pp. 241-244). [6694461] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2013.6694461