Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, «111»-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition

Zai Xing Yang, Lizhe Liu, Senpo Yip, Dapan Li, Lifan Shen, Ziyao Zhou, Ning Han, Tak Fu Hung, Edwin Yue Bun Pun, Xinglong Wu, Aimin Song, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility «111»-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in «111» orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

Original languageEnglish
Pages (from-to)4237-4246
Number of pages10
JournalACS nano
Volume11
Issue number4
DOIs
Publication statusPublished - Apr 25 2017
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)

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