Composition dependence of viscosity for molten Ga1-xAs x (0.0≤x≤0.53)

Koichi Kakimoto, Taketoshi Hibiya

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Viscosity of molten Ga1-xAsx was directly measured by an oscillating cup method. The composition dependence of the synergism viscosity remarkably increases in the vicinity of stoichiometric composition; strong temperature dependence of viscosity was also observed at that composition. Activation energy for viscous flow at the stoichiometric Ga 1-xAsx (x=0.5) melt ranges from 250 to 600 meV, which was larger than those of metals such as gallium and indium whose activation energies were about 60-100 meV. We estimate, therefore, that the melt of stoichiometric composition has middle-range ordering like an aggregation whose range is larger than that of short-range ordering in metals such as gallium and indium.

Original languageEnglish
Pages (from-to)1576-1577
Number of pages2
JournalApplied Physics Letters
Volume52
Issue number19
DOIs
Publication statusPublished - Dec 1 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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