Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy

A. D. Giddings, J. G. Keizer, M. Hara, G. J. Hamhuis, Hiromi Yuasa, H. Fukuzawa, P. M. Koenraad

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

This study compares cross-sectional scanning tunneling microscopy and atom probe tomography. We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs as an exemplary material with which to compare these two nanostructural analysis techniques. We studied the composition of the wetting layer and the QDs, and performed quantitative comparisons of the indium concentration profiles measured by each method. We show that computational models of the wetting layer and the QDs, based on experimental data, are consistent with both analytical approaches. This establishes a link between the two techniques and shows their complimentary behavior, an advantage which we exploit in order to highlight unique features of the examined QD material.

Original languageEnglish
Article number205308
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume83
Issue number20
DOIs
Publication statusPublished - May 17 2011

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Scanning tunneling microscopy
Semiconductor quantum dots
wetting
Tomography
Wetting
scanning tunneling microscopy
tomography
quantum dots
Atoms
probes
Chemical analysis
atoms
Indium
indium
indium arsenide
profiles

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Composition profiling of InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunneling microscopy. / Giddings, A. D.; Keizer, J. G.; Hara, M.; Hamhuis, G. J.; Yuasa, Hiromi; Fukuzawa, H.; Koenraad, P. M.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 83, No. 20, 205308, 17.05.2011.

Research output: Contribution to journalArticle

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