Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma

Y. C. Liu, Katsuhiko Furukawa, Hiroshi Nakashima, Y. Kashiwazaki, D. W. Gao, Kiichiro Uchino, K. Muraoka, H. Tsuzuki

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Abstract

High-quality amorphous silicon-nitrogen alloys (a-SiNx) have been deposited at room temperature by a sputtering-type electron cyclotron resonance (ECR) plasma. A detailed analysis of the properties of a-SiNx films in terms of their composition, microstructure and dielectric characteristics was performed using X-ray photoelectron spectroscopy, infrared (IR) spectroscopy and ramp current-voltage measurement techniques. Their characteristics were correlated with the N2 gas flow rate (NGFR) in the ECR plasma formation. The dependence of solid-state [N]/[Si] ratios in the films on the NGFR indicated that the film composition changed from non-stoichiometry to stoichiometry as the NGFR increased from 0.5 to 1 seem. The dependence of the IR spectra on the NGFR indicated that silicon nitride network was well ordered for an NGFR of 1 seem, in which the dielectric breakdown-field was over 4 MVcm−1. However, when the NGFR was over 1 seem, significant N≡N triple bonds (gaseous N2 molecule) were formed and were trapped inside the films. These N2 molecules formed many voids and defects; and enhanced disorder in the network. This is well correlated by chemical etch and IR results. The dependence of dielectric properties of a-SiNx films on the NGFR demonstrated that these voids and defects lead to a decrease in average dielectric breakdown field and an obvious increase in the distribution of the low breakdown field.

Original languageEnglish
Pages (from-to)137-148
Number of pages12
JournalPhilosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties
Volume79
Issue number1
DOIs
Publication statusPublished - Jan 1 1999

Fingerprint

Electron cyclotron resonance
electron cyclotron resonance
Amorphous silicon
amorphous silicon
gas flow
Sputtering
Flow of gases
Nitrogen
flow velocity
sputtering
Microwaves
Flow rate
Plasmas
microwaves
nitrogen
room temperature
breakdown
Temperature
Electric breakdown
voids

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Compositional and structural studies of amorphous silicon-nitrogen alloys deposited at room temperature using a sputtering-type electron cyclotron resonance microwave plasma",
abstract = "High-quality amorphous silicon-nitrogen alloys (a-SiNx) have been deposited at room temperature by a sputtering-type electron cyclotron resonance (ECR) plasma. A detailed analysis of the properties of a-SiNx films in terms of their composition, microstructure and dielectric characteristics was performed using X-ray photoelectron spectroscopy, infrared (IR) spectroscopy and ramp current-voltage measurement techniques. Their characteristics were correlated with the N2 gas flow rate (NGFR) in the ECR plasma formation. The dependence of solid-state [N]/[Si] ratios in the films on the NGFR indicated that the film composition changed from non-stoichiometry to stoichiometry as the NGFR increased from 0.5 to 1 seem. The dependence of the IR spectra on the NGFR indicated that silicon nitride network was well ordered for an NGFR of 1 seem, in which the dielectric breakdown-field was over 4 MVcm−1. However, when the NGFR was over 1 seem, significant N≡N triple bonds (gaseous N2 molecule) were formed and were trapped inside the films. These N2 molecules formed many voids and defects; and enhanced disorder in the network. This is well correlated by chemical etch and IR results. The dependence of dielectric properties of a-SiNx films on the NGFR demonstrated that these voids and defects lead to a decrease in average dielectric breakdown field and an obvious increase in the distribution of the low breakdown field.",
author = "Liu, {Y. C.} and Katsuhiko Furukawa and Hiroshi Nakashima and Y. Kashiwazaki and Gao, {D. W.} and Kiichiro Uchino and K. Muraoka and H. Tsuzuki",
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AU - Liu, Y. C.

AU - Furukawa, Katsuhiko

AU - Nakashima, Hiroshi

AU - Kashiwazaki, Y.

AU - Gao, D. W.

AU - Uchino, Kiichiro

AU - Muraoka, K.

AU - Tsuzuki, H.

PY - 1999/1/1

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N2 - High-quality amorphous silicon-nitrogen alloys (a-SiNx) have been deposited at room temperature by a sputtering-type electron cyclotron resonance (ECR) plasma. A detailed analysis of the properties of a-SiNx films in terms of their composition, microstructure and dielectric characteristics was performed using X-ray photoelectron spectroscopy, infrared (IR) spectroscopy and ramp current-voltage measurement techniques. Their characteristics were correlated with the N2 gas flow rate (NGFR) in the ECR plasma formation. The dependence of solid-state [N]/[Si] ratios in the films on the NGFR indicated that the film composition changed from non-stoichiometry to stoichiometry as the NGFR increased from 0.5 to 1 seem. The dependence of the IR spectra on the NGFR indicated that silicon nitride network was well ordered for an NGFR of 1 seem, in which the dielectric breakdown-field was over 4 MVcm−1. However, when the NGFR was over 1 seem, significant N≡N triple bonds (gaseous N2 molecule) were formed and were trapped inside the films. These N2 molecules formed many voids and defects; and enhanced disorder in the network. This is well correlated by chemical etch and IR results. The dependence of dielectric properties of a-SiNx films on the NGFR demonstrated that these voids and defects lead to a decrease in average dielectric breakdown field and an obvious increase in the distribution of the low breakdown field.

AB - High-quality amorphous silicon-nitrogen alloys (a-SiNx) have been deposited at room temperature by a sputtering-type electron cyclotron resonance (ECR) plasma. A detailed analysis of the properties of a-SiNx films in terms of their composition, microstructure and dielectric characteristics was performed using X-ray photoelectron spectroscopy, infrared (IR) spectroscopy and ramp current-voltage measurement techniques. Their characteristics were correlated with the N2 gas flow rate (NGFR) in the ECR plasma formation. The dependence of solid-state [N]/[Si] ratios in the films on the NGFR indicated that the film composition changed from non-stoichiometry to stoichiometry as the NGFR increased from 0.5 to 1 seem. The dependence of the IR spectra on the NGFR indicated that silicon nitride network was well ordered for an NGFR of 1 seem, in which the dielectric breakdown-field was over 4 MVcm−1. However, when the NGFR was over 1 seem, significant N≡N triple bonds (gaseous N2 molecule) were formed and were trapped inside the films. These N2 molecules formed many voids and defects; and enhanced disorder in the network. This is well correlated by chemical etch and IR results. The dependence of dielectric properties of a-SiNx films on the NGFR demonstrated that these voids and defects lead to a decrease in average dielectric breakdown field and an obvious increase in the distribution of the low breakdown field.

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