Computational evaluation of electrical conductivity on SiC and the influence of crystal defects

Hideyuki Tsuboi, Megumi Kabasawa, Seika Ouchi, Miki Sato, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Yasuo Kitou, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down electric field which make of it of one of the most appropriate materials for power electronic devices. Previously we reported on a new electrical conductivity evaluation method for nano-scale complex systems based on our original tight-binding quantum chemical molecular dynamics method. In this work, we report on the application of our methodology to various SiC polytypes. The electrical conductivity obtained for perfect crystal models of 3C-, 6H- and 4H-SiC, were equal to 10-20-10-25 S/cm. For the defect including model an extremely large electrical conductivity (of the order of 102 S/cm) was obtained. Consequently these results lead to the conclusion that the 3C-, 6H-, and 4H-SiC polytypes with perfect crystals have insulator properties while the electrical conductivity of the crystal with defect, increases significantly. This result infers that crystals containing defects easily undergo electric breakdown.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2007
EditorsTakashi Fuyuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Akira Suzuki
PublisherTrans Tech Publications Ltd
Pages497-500
Number of pages4
ISBN (Print)9780878493579
Publication statusPublished - Jan 1 2009
Event12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
Duration: Oct 14 2007Oct 19 2007

Publication series

NameMaterials Science Forum
Volume600-603
ISSN (Print)0255-5476

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
CountryJapan
CityOtsu
Period10/14/0710/19/07

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Tsuboi, H., Kabasawa, M., Ouchi, S., Sato, M., Sahnoun, R., Koyama, M., ... Miyamoto, A. (2009). Computational evaluation of electrical conductivity on SiC and the influence of crystal defects. In T. Fuyuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & A. Suzuki (Eds.), Silicon Carbide and Related Materials 2007 (pp. 497-500). (Materials Science Forum; Vol. 600-603). Trans Tech Publications Ltd.