TY - GEN
T1 - Computational evaluation of electrical conductivity on SiC and the influence of crystal defects
AU - Tsuboi, Hideyuki
AU - Kabasawa, Megumi
AU - Ouchi, Seika
AU - Sato, Miki
AU - Sahnoun, Riadh
AU - Koyama, Michihisa
AU - Hatakeyama, Nozomu
AU - Endou, Akira
AU - Takaba, Hiromitsu
AU - Kubo, Momoji
AU - Del Carpio, Carlos A.
AU - Kitou, Yasuo
AU - Makino, Emi
AU - Hosokawa, Norikazu
AU - Hasegawa, Jun
AU - Onda, Shoichi
AU - Miyamoto, Akira
PY - 2009
Y1 - 2009
N2 - The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down electric field which make of it of one of the most appropriate materials for power electronic devices. Previously we reported on a new electrical conductivity evaluation method for nano-scale complex systems based on our original tight-binding quantum chemical molecular dynamics method. In this work, we report on the application of our methodology to various SiC polytypes. The electrical conductivity obtained for perfect crystal models of 3C-, 6H- and 4H-SiC, were equal to 10-20-10-25 S/cm. For the defect including model an extremely large electrical conductivity (of the order of 102 S/cm) was obtained. Consequently these results lead to the conclusion that the 3C-, 6H-, and 4H-SiC polytypes with perfect crystals have insulator properties while the electrical conductivity of the crystal with defect, increases significantly. This result infers that crystals containing defects easily undergo electric breakdown.
AB - The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down electric field which make of it of one of the most appropriate materials for power electronic devices. Previously we reported on a new electrical conductivity evaluation method for nano-scale complex systems based on our original tight-binding quantum chemical molecular dynamics method. In this work, we report on the application of our methodology to various SiC polytypes. The electrical conductivity obtained for perfect crystal models of 3C-, 6H- and 4H-SiC, were equal to 10-20-10-25 S/cm. For the defect including model an extremely large electrical conductivity (of the order of 102 S/cm) was obtained. Consequently these results lead to the conclusion that the 3C-, 6H-, and 4H-SiC polytypes with perfect crystals have insulator properties while the electrical conductivity of the crystal with defect, increases significantly. This result infers that crystals containing defects easily undergo electric breakdown.
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M3 - Conference contribution
AN - SCOPUS:63849146845
SN - 9780878493579
T3 - Materials Science Forum
SP - 497
EP - 500
BT - Silicon Carbide and Related Materials 2007
A2 - Suzuki, Akira
A2 - Okumura, Hajime
A2 - Fukuda, Kenji
A2 - Nishizawa, Shin-ichi
A2 - Kimoto, Tsunenobu
A2 - Fuyuki, Takashi
PB - Trans Tech Publications Ltd
T2 - 12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Y2 - 14 October 2007 through 19 October 2007
ER -