Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification

Lijun Liu, Koichi Kakimoto, Toshinori Taishi, Keigo Hoshikawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The mechanism of formation of boron distribution in silicon crystals grown by the Czochralski method was numerically investigated. The diffusion processes in both the crystal and the melt were taken into account. The transient model involves the seed holding process and the crystal growth process. A Lagrangian method was developed for the computation in order to reduce numerical diffusion. A technique of grid cell generation was adopted for the adaptive mesh to track the crystal-melt interface. The results of computational analyses showed that the diffusion processes in the seed and grown crystals play an important role in the formation of the boron distribution in the grown crystals. The effects of concentration difference between the seed and the melt, the annealing treatment, the seed holding time and the crystal growth rate on the formation of impurity distribution during the seeding process were numerically investigated. The computation results are in good agreement with the experimental data.

Original languageEnglish
Pages (from-to)399-409
Number of pages11
JournalJournal of Crystal Growth
Volume265
Issue number3-4
DOIs
Publication statusPublished - May 1 2004

Fingerprint

Silicon
solidification
Solidification
Impurities
Seed
seeds
impurities
Crystals
silicon
Boron
crystals
Crystallization
Crystal growth
crystal growth
boron
Crystal growth from melt
Czochralski method
inoculation
mesh
grids

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification. / Liu, Lijun; Kakimoto, Koichi; Taishi, Toshinori; Hoshikawa, Keigo.

In: Journal of Crystal Growth, Vol. 265, No. 3-4, 01.05.2004, p. 399-409.

Research output: Contribution to journalArticle

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