Conduction type control of ge-on-insulator: Combination of smart-CutTM and defect elimination

K. Yamamoto, K. Nakae, H. Akamine, D. Wang, H. Nakashima, Md M. Alam, K. Sawano, Z. Xue, M. Zhang, Z. Di

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We electrically characterized Ge-on-Insulator (GOI) fabricated by Smart-CutTM method. Annealing improved electrical characteristics of the p-GOI. On the other hand, conduction type of the n-GOI changed to p-type after annealing. Structural analysis showed many defects were introduced near the bottom interface and it cannot be recovered by annealing. We suggest alternative ways to avoid defects for n-GOI fabrication.

Original languageEnglish
Title of host publicationECS Transactions
EditorsM. A. Eriksson, M. G. Lagally
PublisherInstitute of Physics Publishing
Pages73-77
Number of pages5
Edition1
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - Jan 1 2019
Event2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference - Madison, United States
Duration: Jun 2 2019Jun 6 2019

Publication series

NameECS Transactions
Number1
Volume93
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

Conference2nd Joint International Technology and Device Meeting, ISTDM 2019 / International Conference on Silicon Epitaxy and Heterostructures, ICSI 2019 Conference
CountryUnited States
CityMadison
Period6/2/196/6/19

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Yamamoto, K., Nakae, K., Akamine, H., Wang, D., Nakashima, H., Alam, M. M., Sawano, K., Xue, Z., Zhang, M., & Di, Z. (2019). Conduction type control of ge-on-insulator: Combination of smart-CutTM and defect elimination. In M. A. Eriksson, & M. G. Lagally (Eds.), ECS Transactions (1 ed., pp. 73-77). (ECS Transactions; Vol. 93, No. 1). Institute of Physics Publishing. https://doi.org/10.1149/09301.0073ecst