Conformal deposition of high-purity copper using plasma reactor with H atom source

Hong Jie Jin, Masaharu Shiratani, Yasuhiro Nakatake, Tsuyoshi Fukuzawa, Toshio Kinoshita, Yukio Watanabe, Masaharu Toyofuku

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have studied the effects of H atoms on the removal of impurities in Cu thin films for plasma chemical vapor deposition (CVD) from Cu(hfac)2. In situ Fourier transform infrared (FT-IR) spectroscopic measurements show that H atoms are very effective in removing impurities in the film for substrate temperatures above 70°C. While H atoms are important to obtain high-purity Cu films, deposition rate and film conformality presumably depends on Cu-containing radicals, which are closely related to the degree of dissociation of Cu(hfac)2. Therefore, we have also demonstrated independent control of both concentration of H atoms and the degree of dissociation of Cu(hfac)2 by using a plasma CVD reactor equipped with an H atom source. Excellent film coverage of above 95% in a trench 0.4 μm wide and 3.25 μm deep is realized by their control.

Original languageEnglish
Pages (from-to)4492-4495
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number7 B
Publication statusPublished - Jul 1 1999

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Elementary particle sources
purity
reactors
Copper
Plasmas
copper
Atoms
atoms
Chemical vapor deposition
vapor deposition
dissociation
Impurities
impurities
Deposition rates
Fourier transforms
Infrared radiation
Thin films
Substrates
thin films

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Conformal deposition of high-purity copper using plasma reactor with H atom source. / Jin, Hong Jie; Shiratani, Masaharu; Nakatake, Yasuhiro; Fukuzawa, Tsuyoshi; Kinoshita, Toshio; Watanabe, Yukio; Toyofuku, Masaharu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 7 B, 01.07.1999, p. 4492-4495.

Research output: Contribution to journalArticle

Jin, Hong Jie ; Shiratani, Masaharu ; Nakatake, Yasuhiro ; Fukuzawa, Tsuyoshi ; Kinoshita, Toshio ; Watanabe, Yukio ; Toyofuku, Masaharu. / Conformal deposition of high-purity copper using plasma reactor with H atom source. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1999 ; Vol. 38, No. 7 B. pp. 4492-4495.
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