We propose a new method of bump connection testing using active-matrix metal oxide semiconductor field-effect transistor (MOSFET) switches. One of the bump connections is electrically selected using the active-matrix switches and the current-voltage characteristic between chips is measured through the selected bump connection. In this method, the testing of the individual bumps and the investigation of the bonding failure mechanism are possible. This method can also be applied to the actual chip because the chip can be electrically separated from a test circuit using active-matrix MOSFET switches.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 1 2005|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)