Connection test of area bump using active-matrix switches

Naoya Watanabe, Satoshi Hasegawa, Tanemasa Asano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We propose a new method of bump connection testing using active-matrix metal oxide semiconductor field-effect transistor (MOSFET) switches. One of the bump connections is electrically selected using the active-matrix switches and the current-voltage characteristic between chips is measured through the selected bump connection. In this method, the testing of the individual bumps and the investigation of the bonding failure mechanism are possible. This method can also be applied to the actual chip because the chip can be electrically separated from a test circuit using active-matrix MOSFET switches.

Original languageEnglish
Pages (from-to)2770-2773
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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