Abstract
We performed homo-growth of diamond thin films in an oxygen and hydrogen atmospheres on various oriented diamond substrates by pulsed laser deposition (PLD). The optimum ambient pressures were 50-70 mTorr for oxygen and 4 Torr for hydrogen, respectively. At 50 mTorr oxygen, diamond thin films, which consist of crystallites with diameters of 0.5-1 μm, were grown at a deposition rate of 18 nm/min. The diamond growth in the oxygen atmosphere was strongly influenced by the substrate orientation. However, at 4 Torr hydrogen, extremely smooth diamond films, which consist of non-oriented diamond crystallites with diameters of 20 nm at most, were grown at a deposition rate of 80 nm/min. The ambient hydrogen has an important role on the growth of nanocrystalline diamond. Based on these results, the diamond growth processes for respective atmospheres were discussed.
Original language | English |
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Pages (from-to) | 622-626 |
Number of pages | 5 |
Journal | Diamond and Related Materials |
Volume | 13 |
Issue number | 4-8 |
DOIs | |
Publication status | Published - Apr 2004 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Chemistry(all)
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering