Consideration of diamond film growth on various orientation substrates of diamond in oxygen and hydrogen atmospheres by reactive pulsed laser deposition

Takeshi Hara; Tsuyoshi Yoshitake; Tomohito Fukugawa; Ling yun Zhu; Masaru Itakura; Noriyuki Kuwano; Yoshitsugu Tomokiyo; Kunihito Nagayama

doi:10.1016/j.diamond.2003.10.078

Consideration of diamond film growth on various orientation substrates of diamond in oxygen and hydrogen atmospheres by reactive pulsed laser deposition

Takeshi Hara, Tsuyoshi Yoshitake, Tomohito Fukugawa, Ling yun Zhu, Masaru Itakura, Noriyuki Kuwano, Yoshitsugu Tomokiyo, Kunihito Nagayama

Materials Physics and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We performed homo-growth of diamond thin films in an oxygen and hydrogen atmospheres on various oriented diamond substrates by pulsed laser deposition (PLD). The optimum ambient pressures were 50-70 mTorr for oxygen and 4 Torr for hydrogen, respectively. At 50 mTorr oxygen, diamond thin films, which consist of crystallites with diameters of 0.5-1 μm, were grown at a deposition rate of 18 nm/min. The diamond growth in the oxygen atmosphere was strongly influenced by the substrate orientation. However, at 4 Torr hydrogen, extremely smooth diamond films, which consist of non-oriented diamond crystallites with diameters of 20 nm at most, were grown at a deposition rate of 80 nm/min. The ambient hydrogen has an important role on the growth of nanocrystalline diamond. Based on these results, the diamond growth processes for respective atmospheres were discussed.

Original language	English
Pages (from-to)	622-626
Number of pages	5
Journal	Diamond and Related Materials
Volume	13
Issue number	4-8
DOIs	https://doi.org/10.1016/j.diamond.2003.10.078
Publication status	Published - Apr 2004

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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Consideration of diamond film growth on various orientation substrates of diamond in oxygen and hydrogen atmospheres by reactive pulsed laser deposition. / Hara, Takeshi; Yoshitake, Tsuyoshi; Fukugawa, Tomohito; Zhu, Ling yun; Itakura, Masaru; Kuwano, Noriyuki; Tomokiyo, Yoshitsugu; Nagayama, Kunihito.

In: Diamond and Related Materials, Vol. 13, No. 4-8, 04.2004, p. 622-626.

Research output: Contribution to journal › Article › peer-review

Hara, Takeshi ; Yoshitake, Tsuyoshi ; Fukugawa, Tomohito ; Zhu, Ling yun ; Itakura, Masaru ; Kuwano, Noriyuki ; Tomokiyo, Yoshitsugu ; Nagayama, Kunihito. / Consideration of diamond film growth on various orientation substrates of diamond in oxygen and hydrogen atmospheres by reactive pulsed laser deposition. In: Diamond and Related Materials. 2004 ; Vol. 13, No. 4-8. pp. 622-626.

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title = "Consideration of diamond film growth on various orientation substrates of diamond in oxygen and hydrogen atmospheres by reactive pulsed laser deposition",

abstract = "We performed homo-growth of diamond thin films in an oxygen and hydrogen atmospheres on various oriented diamond substrates by pulsed laser deposition (PLD). The optimum ambient pressures were 50-70 mTorr for oxygen and 4 Torr for hydrogen, respectively. At 50 mTorr oxygen, diamond thin films, which consist of crystallites with diameters of 0.5-1 μm, were grown at a deposition rate of 18 nm/min. The diamond growth in the oxygen atmosphere was strongly influenced by the substrate orientation. However, at 4 Torr hydrogen, extremely smooth diamond films, which consist of non-oriented diamond crystallites with diameters of 20 nm at most, were grown at a deposition rate of 80 nm/min. The ambient hydrogen has an important role on the growth of nanocrystalline diamond. Based on these results, the diamond growth processes for respective atmospheres were discussed.",

author = "Takeshi Hara and Tsuyoshi Yoshitake and Tomohito Fukugawa and Zhu, {Ling yun} and Masaru Itakura and Noriyuki Kuwano and Yoshitsugu Tomokiyo and Kunihito Nagayama",

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T1 - Consideration of diamond film growth on various orientation substrates of diamond in oxygen and hydrogen atmospheres by reactive pulsed laser deposition

AU - Hara, Takeshi

AU - Yoshitake, Tsuyoshi

AU - Fukugawa, Tomohito

AU - Zhu, Ling yun

AU - Itakura, Masaru

AU - Kuwano, Noriyuki

AU - Tomokiyo, Yoshitsugu

AU - Nagayama, Kunihito

PY - 2004/4

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N2 - We performed homo-growth of diamond thin films in an oxygen and hydrogen atmospheres on various oriented diamond substrates by pulsed laser deposition (PLD). The optimum ambient pressures were 50-70 mTorr for oxygen and 4 Torr for hydrogen, respectively. At 50 mTorr oxygen, diamond thin films, which consist of crystallites with diameters of 0.5-1 μm, were grown at a deposition rate of 18 nm/min. The diamond growth in the oxygen atmosphere was strongly influenced by the substrate orientation. However, at 4 Torr hydrogen, extremely smooth diamond films, which consist of non-oriented diamond crystallites with diameters of 20 nm at most, were grown at a deposition rate of 80 nm/min. The ambient hydrogen has an important role on the growth of nanocrystalline diamond. Based on these results, the diamond growth processes for respective atmospheres were discussed.

AB - We performed homo-growth of diamond thin films in an oxygen and hydrogen atmospheres on various oriented diamond substrates by pulsed laser deposition (PLD). The optimum ambient pressures were 50-70 mTorr for oxygen and 4 Torr for hydrogen, respectively. At 50 mTorr oxygen, diamond thin films, which consist of crystallites with diameters of 0.5-1 μm, were grown at a deposition rate of 18 nm/min. The diamond growth in the oxygen atmosphere was strongly influenced by the substrate orientation. However, at 4 Torr hydrogen, extremely smooth diamond films, which consist of non-oriented diamond crystallites with diameters of 20 nm at most, were grown at a deposition rate of 80 nm/min. The ambient hydrogen has an important role on the growth of nanocrystalline diamond. Based on these results, the diamond growth processes for respective atmospheres were discussed.

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