Consideration of Growth Mechanism of Diamond Thin Films by Pulsed Laser Deposition

Takeshi Hara, Takasi Nishiyama, Tsuyoshi Yoshitake, Kunihito Nagayama

    Research output: Contribution to journalArticle

    Abstract

    Although diamond thin films have been mainly produced by chemical vapor deposition methods (CVD) up to now, pulsed laser deposition (PLD) have a potential for growing diamond thin films including no hydrogen at a lower substrate temperature than those of CVD. In the previous study, we could succeed in growing diamond thin film homoepitaxially in an oxygen atmosphere by pulsed laser ablation of graphite. In this report, we investigated structural change of diamond thin film for the substrate temperature and the repetition rate of laser pulses. Based on the result, we considered the growth mechanism of diamond thin film by pulsed laser deposition.

    Original languageEnglish
    Pages (from-to)939-944
    Number of pages6
    JournalIEEJ Transactions on Fundamentals and Materials
    Volume123
    Issue number9
    DOIs
    Publication statusPublished - Jan 1 2003

    Fingerprint

    Diamond films
    Pulsed laser deposition
    Thin films
    Chemical vapor deposition
    Laser ablation
    Substrates
    Pulsed lasers
    Laser pulses
    Graphite
    Hydrogen
    Temperature
    Oxygen

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

    Cite this

    Consideration of Growth Mechanism of Diamond Thin Films by Pulsed Laser Deposition. / Hara, Takeshi; Nishiyama, Takasi; Yoshitake, Tsuyoshi; Nagayama, Kunihito.

    In: IEEJ Transactions on Fundamentals and Materials, Vol. 123, No. 9, 01.01.2003, p. 939-944.

    Research output: Contribution to journalArticle

    Hara, Takeshi ; Nishiyama, Takasi ; Yoshitake, Tsuyoshi ; Nagayama, Kunihito. / Consideration of Growth Mechanism of Diamond Thin Films by Pulsed Laser Deposition. In: IEEJ Transactions on Fundamentals and Materials. 2003 ; Vol. 123, No. 9. pp. 939-944.
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