TY - JOUR
T1 - Consideration of Growth Mechanism of Diamond Thin Films by Pulsed Laser Deposition
AU - Hara, Takeshi
AU - Nishiyama, Takasi
AU - Yoshitake, Tsuyoshi
AU - Nagayama, Kunihito
PY - 2003
Y1 - 2003
N2 - Although diamond thin films have been mainly produced by chemical vapor deposition methods (CVD) up to now, pulsed laser deposition (PLD) have a potential for growing diamond thin films including no hydrogen at a lower substrate temperature than those of CVD. In the previous study, we could succeed in growing diamond thin film homoepitaxially in an oxygen atmosphere by pulsed laser ablation of graphite. In this report, we investigated structural change of diamond thin film for the substrate temperature and the repetition rate of laser pulses. Based on the result, we considered the growth mechanism of diamond thin film by pulsed laser deposition.
AB - Although diamond thin films have been mainly produced by chemical vapor deposition methods (CVD) up to now, pulsed laser deposition (PLD) have a potential for growing diamond thin films including no hydrogen at a lower substrate temperature than those of CVD. In the previous study, we could succeed in growing diamond thin film homoepitaxially in an oxygen atmosphere by pulsed laser ablation of graphite. In this report, we investigated structural change of diamond thin film for the substrate temperature and the repetition rate of laser pulses. Based on the result, we considered the growth mechanism of diamond thin film by pulsed laser deposition.
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U2 - 10.1541/ieejfms.123.939
DO - 10.1541/ieejfms.123.939
M3 - Article
AN - SCOPUS:85024462407
SN - 0385-4205
VL - 123
SP - 939
EP - 944
JO - IEEJ Transactions on Fundamentals and Materials
JF - IEEJ Transactions on Fundamentals and Materials
IS - 9
ER -